Magnetic-Field-Induced Modification of Properties of Silicon Lattice Defects

Abstract:

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A possibility of magnetic-field-induced modification of structural defects in silicon crystals is studied. It is shown that magnetic field action essentially affects the structuredependent properties of Si (mechanical and electrophysical)

Info:

Periodical:

Solid State Phenomena (Volumes 108-109)

Edited by:

B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler

Pages:

339-344

DOI:

10.4028/www.scientific.net/SSP.108-109.339

Citation:

V.A. Makara et al., "Magnetic-Field-Induced Modification of Properties of Silicon Lattice Defects", Solid State Phenomena, Vols. 108-109, pp. 339-344, 2005

Online since:

December 2005

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Price:

$35.00

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