Magnetic-Field-Induced Modification of Properties of Silicon Lattice Defects

V.A. Makara; L.P. Steblenko; Yu.L. Kolchenko; S.M. Naumenko; O.A. Patran; V.M. Kravchenko; O.S. Dranenko

doi:10.4028/www.scientific.net/SSP.108-109.339

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Magnetic-Field-Induced Modification of Properties of Silicon Lattice Defects

Abstract:

A possibility of magnetic-field-induced modification of structural defects in silicon crystals is studied. It is shown that magnetic field action essentially affects the structuredependent properties of Si (mechanical and electrophysical)

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Periodical:

Solid State Phenomena (Volumes 108-109)

Pages:

339-344

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.108-109.339

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Online since:

December 2005

Authors:

V.A. Makara, L.P. Steblenko, Yu.L. Kolchenko, S.M. Naumenko, O.A. Patran, V.M. Kravchenko, O.S. Dranenko

Keywords:

Defect, Magnetic Field, Microhardness, Silicon, Surface Electric Resistivity

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