A New Approach to Study the Damage Induced by Inert Gases Implantation in Silicon
In the present work, we report on the effects of the implantation temperature on the formation of bubbles and extended defects in Ne+-implanted Si(001) substrates. The implantations were performed at 50 keV to a fluence of 5x1016 cm-2, for distinct implantation temperatures within the 250°C≤Ti≤800°C interval. The samples are investigated using a combination of cross-sectional and plan-view Transmission Electron Microscopy (TEM) observations and Grazing Incidence Small-Angle X-ray Scattering (GISAXS)measurements. In comparison with similar He implants, we demonstrate that the Ne implants can lead to the formation of a much denser bubble system.
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
S. Peripolli et al., "A New Approach to Study the Damage Induced by Inert Gases Implantation in Silicon", Solid State Phenomena, Vols. 108-109, pp. 357-364, 2005