A New Approach to Study the Damage Induced by Inert Gases Implantation in Silicon

Abstract:

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In the present work, we report on the effects of the implantation temperature on the formation of bubbles and extended defects in Ne+-implanted Si(001) substrates. The implantations were performed at 50 keV to a fluence of 5x1016 cm-2, for distinct implantation temperatures within the 250°C≤Ti≤800°C interval. The samples are investigated using a combination of cross-sectional and plan-view Transmission Electron Microscopy (TEM) observations and Grazing Incidence Small-Angle X-ray Scattering (GISAXS)measurements. In comparison with similar He implants, we demonstrate that the Ne implants can lead to the formation of a much denser bubble system.

Info:

Periodical:

Solid State Phenomena (Volumes 108-109)

Edited by:

B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler

Pages:

357-364

DOI:

10.4028/www.scientific.net/SSP.108-109.357

Citation:

S. Peripolli et al., "A New Approach to Study the Damage Induced by Inert Gases Implantation in Silicon", Solid State Phenomena, Vols. 108-109, pp. 357-364, 2005

Online since:

December 2005

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$35.00

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