A New Approach to Study the Damage Induced by Inert Gases Implantation in Silicon

S. Peripolli; Marie France Beaufort; David Babonneau; Sophie Rousselet; P.F.P. Fichtner; L. Amaral; Erwan Oliviero; Jean François Barbot; S.E. Donnelly

doi:10.4028/www.scientific.net/SSP.108-109.357

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Point Defects Interaction with Extended Defects and Impurities and Its Influence on the Si-SiO₂ System Properties
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Phase Transition on Surface of IV Group Semiconductors by Laser Radiation
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Stress - Dependent Out - Annealing of Defects in Self - Implanted Silicon
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A New Approach to Study the Damage Induced by Inert Gases Implantation in Silicon
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First Principles Calculation for Point Defect Behavior, Oxygen Precipitation and Cu Gettering in Czochralski Silicon
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On the Effect of Lead on Irradiation Induced Defects in Silicon
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Formation and Properties of Iron-Phosphorus and Iron-Phosphorus-Hydrogen Complexes in Silicon
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Determination of Effective Diffusion Coefficient of Copper in Silicon by Diffusion from Bulk into the Polysilicon Backside
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HomeSolid State PhenomenaSolid State Phenomena Vols. 108-109A New Approach to Study the Damage Induced by...

A New Approach to Study the Damage Induced by Inert Gases Implantation in Silicon

Abstract:

In the present work, we report on the effects of the implantation temperature on the formation of bubbles and extended defects in Ne+-implanted Si(001) substrates. The implantations were performed at 50 keV to a fluence of 5x1016 cm-2, for distinct implantation temperatures within the 250°C≤Ti≤800°C interval. The samples are investigated using a combination of cross-sectional and plan-view Transmission Electron Microscopy (TEM) observations and Grazing Incidence Small-Angle X-ray Scattering (GISAXS)measurements. In comparison with similar He implants, we demonstrate that the Ne implants can lead to the formation of a much denser bubble system.

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Periodical:

Solid State Phenomena (Volumes 108-109)

Pages:

357-364

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.108-109.357

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Online since:

December 2005

Authors:

S. Peripolli, Marie France Beaufort, David Babonneau, Sophie Rousselet, P.F.P. Fichtner, L. Amaral, Erwan Oliviero, Jean François Barbot, S.E. Donnelly

Keywords:

Helium, Ion Implantation, Nanocavities, Neon, Silicon

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References

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