Stress - Dependent Out - Annealing of Defects in Self - Implanted Silicon
Effect of hydrostatic pressure (HP) on out – annealing of defects in self – implanted silicon (Si:Si, Si+ doses 5x1016 cm-2 and 1x1017 cm-2, energies 50 keV and 160 keV), treated for 1 – 10 h at up to 1400 K (HT) under HP ≤ 1.4 GPa, has been investigated by photoluminescence, X-ray and related methods. Applied at 720 – 1270 K enhanced pressure does not affect or affects adversely Si:Si structure while at 1400 K assists in its improvement. HP – dependent transformations in Si:Si at HT are related to effect of HP on diffusion of point defects, such as silicon interstitials and vacancies produced at implantation. Out - annealing of defects in self - implanted silicon is dependent also on spatial position of damaged areas in Si substrate.
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
A. Misiuk et al., "Stress - Dependent Out - Annealing of Defects in Self - Implanted Silicon", Solid State Phenomena, Vols. 108-109, pp. 351-356, 2005