Stress - Dependent Out - Annealing of Defects in Self - Implanted Silicon

Andrzej Misiuk; Barbara Surma; Jadwiga Bak-Misiuk

doi:10.4028/www.scientific.net/SSP.108-109.351

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HomeSolid State PhenomenaSolid State Phenomena Vols. 108-109Stress - Dependent Out - Annealing of Defects in...

Stress - Dependent Out - Annealing of Defects in Self - Implanted Silicon

Abstract:

Effect of hydrostatic pressure (HP) on out – annealing of defects in self – implanted silicon (Si:Si, Si+ doses 5x1016 cm-2 and 1x1017 cm-2, energies 50 keV and 160 keV), treated for 1 – 10 h at up to 1400 K (HT) under HP ≤ 1.4 GPa, has been investigated by photoluminescence, X-ray and related methods. Applied at 720 – 1270 K enhanced pressure does not affect or affects adversely Si:Si structure while at 1400 K assists in its improvement. HP – dependent transformations in Si:Si at HT are related to effect of HP on diffusion of point defects, such as silicon interstitials and vacancies produced at implantation. Out - annealing of defects in self - implanted silicon is dependent also on spatial position of damaged areas in Si substrate.

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Periodical:

Solid State Phenomena (Volumes 108-109)

Pages:

351-356

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.108-109.351

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Online since:

December 2005

Authors:

Andrzej Misiuk, Barbara Surma, Jadwiga Bak-Misiuk

Keywords:

CZ-Si, Defect, Hydrostatic Pressure, Out-Annealing, Self-Implantation, Stress

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