Realization of Silicon Nitride Template for Nanoimprint: A First Result

Abstract:

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A first result of realization of silicon nitride templates on 100mm silicon wafer as nanoinprint mold using simple wet etching method is reported in this paper. The process is based on traditional photolithograph and following buffer HF wet etching, which started from a p-type wafer with 400nm thermal silicon oxide, 200nm PECVD silicon nitride and 400nm PECVD silicon oxide sandwich layer. After patterning with lithography, the patterned resist is used as mask for the isotropic underlayer wet etching of silicon dioxide with buffer HF solution. Using the obtained nanosacle silicon dioxide lines as RIE dry etching mask, silicon nitride template of 100nm width with steep sidewalls is successfully realized.

Info:

Periodical:

Solid State Phenomena (Volumes 121-123)

Edited by:

Chunli BAI, Sishen XIE, Xing ZHU

Pages:

669-672

DOI:

10.4028/www.scientific.net/SSP.121-123.669

Citation:

Z. W. Liu et al., "Realization of Silicon Nitride Template for Nanoimprint: A First Result", Solid State Phenomena, Vols. 121-123, pp. 669-672, 2007

Online since:

March 2007

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Price:

$35.00

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