SnO2 thin films have been grown on Si3N4 substrates and also on Al2O3 sensor substrates with Pt interdigitated electrodes by the pulsed excimer laser deposition (PLD). Palladium doped SnO2 thin film was also prepared by the PLD method combined with the DC sputtering process. The substrate temperature and the oxygen gas pressure were changed from 300 to 500°C and from 100 to 300 mTorr, respectively during deposition. The morphology and structural properties of the prepared thin films have been studied by AFM and XRD. The gas sensing properties of the SnO2 sensor to NO gas was evaluated by measuring electrical resistance between interdigitated electrodes. The highest sensitivity of the undoped SnO2 and Pd doped sensor was found to be around 9.5 and 42, respectively.