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HomeSolid State PhenomenaSolid State Phenomena Vols. 124-126Preparation and Characterization of SnO2 Thin Film...

Preparation and Characterization of SnO₂ Thin Film Gas Sensor for NO_x Gas for Environmental Monitoring

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Abstract:

SnO2 thin films have been grown on Si3N4 substrates and also on Al2O3 sensor substrates with Pt interdigitated electrodes by the pulsed excimer laser deposition (PLD). Palladium doped SnO2 thin film was also prepared by the PLD method combined with the DC sputtering process. The substrate temperature and the oxygen gas pressure were changed from 300 to 500°C and from 100 to 300 mTorr, respectively during deposition. The morphology and structural properties of the prepared thin films have been studied by AFM and XRD. The gas sensing properties of the SnO2 sensor to NO gas was evaluated by measuring electrical resistance between interdigitated electrodes. The highest sensitivity of the undoped SnO2 and Pd doped sensor was found to be around 9.5 and 42, respectively.

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Periodical:

Solid State Phenomena (Volumes 124-126)

Pages:

223-226

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.124-126.223

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Online since:

June 2007

Authors:

Md. Mosharaf Hossain Bhuiyan, Tsuyoshi Ueda, Tomoaki Ikegami

Keywords:

Environment, Gas Sensor, Laser, PLD, Pollution, SnO₂, Thin Film

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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[1] W. Gopel, Sens. Actuators B 26-27 (1995) p.1.

[2] V. Lantto, J. Eur. Ceram. Soc. 21 (2001) (1961).

[3] P.T. Moseley, D.E. Williams, in: P.T. Moseley, J.O.W. Norris, D.E. Williams (Eds. ), Adam Hilger by IOP Publishing Ltd., Brystol, UK, 1991, p.46.

[4] X. Cao, L. Cao, W. Yao and X. Ye, Thin Solid Films 317 (1998), p.443.

[5] W. Liu, X. Cao, Y. Zhu and L. Cao, Sens. Actuators B Chem. 66 (2000), p.219.

[6] F.J. Schmitte and G. Wiegleb, Sens. Actuators B Chem. 4 (1991), p.473.

[7] M. de la, L. Olvera and R. Asomoza, Sens. Actuators B Chem. 45 (1997), p.49.

[8] F. Morazzoni, C. Canevali, N. Chiodini, C. Mari, R. Ruffo, R. Scotti, L. Armelao, E. Tondello, L. Depero and E. Bontempi, Mater. Sci. Eng. C 15 (2001), p.167.

DOI: 10.1021/cm001228o

[9] A. Diéguez, A.R. Rodriguez, J.R. Morante, J. Kappler, N. Bârsan and W. Cöpel, Sens. Actuators B 60 (1999), p.125.

[10] D.G. Rickerby and M.C. Horrillo, J. Nanostruct. Mater. 10 (1998), p.357.

[11] W.S. Hu, Z.G. Liu, J.G. Zheng, X.B. Hu, X.L. Guo and W. Göpel, J. Mater. Sci.: Mater. Electron. 8 (1997), p.155.

[12] G. Sberveglieri, G. Faglia, S. Groppelli, P. Nelli and C. Perego, Sens. Actuators B 13-14 (1993), p.117.

1×10.

[5] 2×10.

[5] 3×10.

[5] 4×10.

[5] [0] [10] [20] [30] [40] [50] [0] 50 100 150 200 250 300 350 Pd doped SnO2 thin film (50 ppm NO gas) Rg Ra S Registance, Rg, Ra (Ω) Sensitivity, Rg/Ra Operating temperature (°C) Fig. 5. Sensitivity of Pd doped SnO2 thin film.

DOI: 10.1016/j.tsf.2013.02.039

1×10.

[4] 2×10.

[4] 3×10.

[4] 4×10.

[4] 5×10.

[4] [0] [2] [4] [6] [8] [10] [0] 50 100 150 200 250 300 350 unddoped SnO2 thin film (50 ppm NO gas) Rg Ra S Registance, Rg, Ra (Ω) Sensitivity Rg/Ra Operating Tempertaure (°C) Fig. 4. Sensitivity of undoped SnO2 thin film.