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Structural and Mechanical Properties of Low Dielectric Constant SiOC(-H) Films Using MTES/O2 Deposited by PECVD

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Abstract:

Low dielectric constant SiOC(-H) films were deposited on p-type Si (100) substrates by plasma enhanced chemical vapor deposition (PECVD) using methyltriethoxysilane (MTES; C7H18O3Si) and oxygen gas as precursors. The SiOC(-H) films were deposited at room temperature and then annealed. Nanoindentation studies were carried out in order to determine the mechanical properties of the SiOC(-H) films. The elastic modulus and hardness of SiOC(-H) films were measured to be in the range of 2.14 – 5.02 and 0.12 – 0.74 GPa, respectively. It was observed that the values of elastic modulus and hardness decreases with increase of flow rate ratio of the precursors. In the SiOC(-H) film, -CH3 group as an end group was introduced into -O-Si-O- chain network, thereby reducing the film density to decrease the values of the mechanical properties.

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Periodical:

Solid State Phenomena (Volumes 124-126)

Pages:

239-242

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.124-126.239

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Online since:

June 2007

Authors:

R. Navamathavan, Anvar Zakirov, Hyun Seung Kim, Yong Jun Jang, An Soo Jung, Chi Kyu Choi

Keywords:

FT-IR, Low-K, MTES, Nanoindentation, PECVD, SiOC(-H) Film

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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