Structural and Mechanical Properties of Low Dielectric Constant SiOC(-H) Films Using MTES/O2 Deposited by PECVD

Abstract:

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Low dielectric constant SiOC(-H) films were deposited on p-type Si (100) substrates by plasma enhanced chemical vapor deposition (PECVD) using methyltriethoxysilane (MTES; C7H18O3Si) and oxygen gas as precursors. The SiOC(-H) films were deposited at room temperature and then annealed. Nanoindentation studies were carried out in order to determine the mechanical properties of the SiOC(-H) films. The elastic modulus and hardness of SiOC(-H) films were measured to be in the range of 2.14 – 5.02 and 0.12 – 0.74 GPa, respectively. It was observed that the values of elastic modulus and hardness decreases with increase of flow rate ratio of the precursors. In the SiOC(-H) film, -CH3 group as an end group was introduced into -O-Si-O- chain network, thereby reducing the film density to decrease the values of the mechanical properties.

Info:

Periodical:

Solid State Phenomena (Volumes 124-126)

Edited by:

Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park

Pages:

239-242

DOI:

10.4028/www.scientific.net/SSP.124-126.239

Citation:

R. Navamathavan et al., "Structural and Mechanical Properties of Low Dielectric Constant SiOC(-H) Films Using MTES/O2 Deposited by PECVD", Solid State Phenomena, Vols. 124-126, pp. 239-242, 2007

Online since:

June 2007

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$35.00

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