Structural and Mechanical Properties of Low Dielectric Constant SiOC(-H) Films Using MTES/O2 Deposited by PECVD
Low dielectric constant SiOC(-H) films were deposited on p-type Si (100) substrates by plasma enhanced chemical vapor deposition (PECVD) using methyltriethoxysilane (MTES; C7H18O3Si) and oxygen gas as precursors. The SiOC(-H) films were deposited at room temperature and then annealed. Nanoindentation studies were carried out in order to determine the mechanical properties of the SiOC(-H) films. The elastic modulus and hardness of SiOC(-H) films were measured to be in the range of 2.14 – 5.02 and 0.12 – 0.74 GPa, respectively. It was observed that the values of elastic modulus and hardness decreases with increase of flow rate ratio of the precursors. In the SiOC(-H) film, -CH3 group as an end group was introduced into -O-Si-O- chain network, thereby reducing the film density to decrease the values of the mechanical properties.
Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park
R. Navamathavan et al., "Structural and Mechanical Properties of Low Dielectric Constant SiOC(-H) Films Using MTES/O2 Deposited by PECVD", Solid State Phenomena, Vols. 124-126, pp. 239-242, 2007