Electronic Properties Carbon Film Using Chemical Process

Sang Heon Lee

doi:10.4028/www.scientific.net/SSP.124-126.251

Paper Titles

Fabrication of Porous YSZ from ZnO-YSZ Cermet
p.235

Structural and Mechanical Properties of Low Dielectric Constant SiOC(-H) Films Using MTES/O₂ Deposited by PECVD
p.239

Effects of Firing Temperature and Film Thickness on the Critical Properties of YBCO Film by the '211 Process'
p.243

Characteristics of SiO₂ Film Grown by Atomic Layer Deposition as the Gate Insulator of Low-Temperature Polysilicon Thin-Film Transistors
p.247

Electronic Properties Carbon Film Using Chemical Process
p.251

Microstructural Study on the Wear Behavior of Cu-TiB₂ Composites for Electrical Contact Materials
p.255

Study on Light Induced Leakage Current Related to Amorphous Silicon TFT Design
p.259

Indium Tin Oxide Film Characteristics after Chemical Mechanical Polishing Process with Control of Pad Conditioning Temperature
p.263

Electrical and Thermal Properties of Platinum Thin Films Prepared by DC Magnetron Sputtering for Micro-Heater of Microsensor Applications after CMP Process
p.267

HomeSolid State PhenomenaSolid State Phenomena Vols. 124-126Electronic Properties Carbon Film Using Chemical...

Electronic Properties Carbon Film Using Chemical Process

Abstract:

Electro-deposition of carbon film on silicon substrate in methanol solution was carried out with various current density, solution temperature and electrode spacing between anode and cathode. The carbon films with smooth surface morphology and high electrical resistance were formed when the distance between electrode was relatively wider. The electrical resistance of the carbon films were independent of both current density and solution temperature.

You might also be interested in these eBooks

Advances in Nanomaterials and Processing

View Preview

Info:

Periodical:

Solid State Phenomena (Volumes 124-126)

Pages:

251-254

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.124-126.251

Citation:

Cite this paper

Online since:

June 2007

Authors:

Sang Heon Lee

Keywords:

Carbon, Film, Methanol, Silicon

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] B. Pate, Electronic Properties and Applications, eds. L.S. Pan and D.R. Kania (Kluwer Academic, Boston) Chap. 2, (1995).

Google Scholar

[2] A. AVoevodin, S.J.P. Laube, S.D. Walck, J.S. Solomon, M.S. Donley, and J.S. Zabinski: J. Appl. Phys., Vol. 78 (1995) p.4123.

Google Scholar

[3] F. Rossi, B. Andre, A. van Veen, P.E. Mijnarends, H. Schut, M.P. Delplancke, W. Gissler, J. Haupt,G. Lucazeau, and L. Abello: J. Appl. Phys., Vol. 75 (1994) p.3121.

DOI: 10.1063/1.356164

Google Scholar

[4] L.L. Maissel, and R. Glang : Hand book of Thin Film Technology (McGrow-Hill, New York) Chap. 5, 5 (1970).

Google Scholar

[5] T. Suzuki, Y. Manita, T. Yamazaki, S. Wada, and T. Noma : J. Mater. Sci., Vol. 30 (1995) p. (2067).

Google Scholar