Properties of Electrical Conductivity of Amorphous Tungsten-Doped Vanadium Oxide for Uncooled Microbolometers

Yong Hee Han; Seung Hoon Lee; Kun Tae Kim; In Hoon Choi; Sung Moon

doi:10.4028/www.scientific.net/SSP.124-126.343

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HomeSolid State PhenomenaSolid State Phenomena Vols. 124-126Properties of Electrical Conductivity of Amorphous...

Properties of Electrical Conductivity of Amorphous Tungsten-Doped Vanadium Oxide for Uncooled Microbolometers

Abstract:

In recent years, we have reported uncooled microbolometer with amorphous vanadium-tungsten oxide as a thermometric material. The reported tungsten-doped vanadium oxide showed very high TCR over -3.0%/K compared with common vanadium oxide, which generally has the TCR values near -2.0%/K. In this work, we characterized properties of electrical conductivity of amorphous tungsten-doped vanadium oxide by investigating electronic structure between vanadium oxide and tungsten-doped vanadium oxide. Finally, it is concluded that tungsten addition into vanadium give rise to changes of electronic structure when pure vanadium is oxidized and this changes of electronic structure attribute to electrical properties such as high TCR values of vanadium-tungsten oxide.

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Periodical:

Solid State Phenomena (Volumes 124-126)

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343-346

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https://doi.org/10.4028/www.scientific.net/SSP.124-126.343

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Online since:

June 2007

Authors:

Yong Hee Han, Seung Hoon Lee, Kun Tae Kim, In Hoon Choi, Sung Moon

Keywords:

Conductivity, Microbolometers, Vanadium Oxide

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