Behavior of Various Organosilicon Molecules in PECVD Processes for Hydrocarbon-Doped Silicon Oxide Films

Yong Sup Yun; Takanori Yoshida; Norifumi Shimazu; Yasushi Inoue; Nagahiro Saito; Osamu Takai

doi:10.4028/www.scientific.net/SSP.124-126.347

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HomeSolid State PhenomenaSolid State Phenomena Vols. 124-126Behavior of Various Organosilicon Molecules in...

Behavior of Various Organosilicon Molecules in PECVD Processes for Hydrocarbon-Doped Silicon Oxide Films

Abstract:

Plasma diagnosis was performed by means of optical emission spectroscopy in the plasma-enhanced chemical vapor deposition process for preparation of hydrocarbon-doped silicon oxide films. The chemical bonding states were characterized by a fourier-transform infrared spectrometer. Based on the results of the diagnosis in organosilane plasma and the chemical bonding states, a reaction model for the formation process of hydrocarbon-doped silicon oxide films was discussed. From the results of optical emission spectroscopy, we found that the oxygen atoms of methoxy groups in TMMOS molecules can be dissociated easily in the plasma and behave as a kind of oxidizing agent. Siloxane bondings in HMDSO, on the other hand, hardly expel oxygen atoms.

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Solid State Phenomena (Volumes 124-126)

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347-350

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.124-126.347

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Online since:

June 2007

Authors:

Yong Sup Yun, Takanori Yoshida, Norifumi Shimazu, Yasushi Inoue, Nagahiro Saito, Osamu Takai

Keywords:

Optical Emission Spectroscopy, Organosilane Plasma, PECVD, Silicon Oxide Film

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