Effect of Cu Dopant on the Electrical Property of ZnO Thin Films Deposited by Pulsed Laser Deposition

Gun Hee Kim; Hong Seong Kang; Dong Lim Kim; Hyun Woo Chang; Byung Du Ahn; Sang Yeol Lee

doi:10.4028/www.scientific.net/SSP.124-126.339

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HomeSolid State PhenomenaSolid State Phenomena Vols. 124-126Effect of Cu Dopant on the Electrical Property of...

Effect of Cu Dopant on the Electrical Property of ZnO Thin Films Deposited by Pulsed Laser Deposition

Abstract:

Cu-doped ZnO (denoted by ZnO:Cu) films have been prepared by pulsed laser deposition using 3 wt. CuO doped ZnO ceramic target. The carrier concentrations (1011~1018 cm-3) and, electrical resistivity (10-1~105 cm) of deposited Cu-doped ZnO thin films were varied depending on deposition conditions. Variations of electrical properties of Cu-doped ZnO indicate that copper dopants may play an important role in determining their electrical properties, compared with undoped films. To investigate effects of copper dopants on the properties of ZnO thin films, X-Ray diffraction (XRD), photoluminescence (PL), and Hall measurements have been performed and corresponded.

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Periodical:

Solid State Phenomena (Volumes 124-126)

Pages:

339-342

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.124-126.339

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Online since:

June 2007

Authors:

Gun Hee Kim, Hong Seong Kang, Dong Lim Kim, Hyun Woo Chang, Byung Du Ahn, Sang Yeol Lee

Keywords:

Cu Doped ZnO, Photoluminescence (PL), Pulsed Laser Deposition (PLD)

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