Effect of Cu Dopant on the Electrical Property of ZnO Thin Films Deposited by Pulsed Laser Deposition

Abstract:

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Cu-doped ZnO (denoted by ZnO:Cu) films have been prepared by pulsed laser deposition using 3 wt. CuO doped ZnO ceramic target. The carrier concentrations (1011~1018 cm-3) and, electrical resistivity (10-1~105  cm) of deposited Cu-doped ZnO thin films were varied depending on deposition conditions. Variations of electrical properties of Cu-doped ZnO indicate that copper dopants may play an important role in determining their electrical properties, compared with undoped films. To investigate effects of copper dopants on the properties of ZnO thin films, X-Ray diffraction (XRD), photoluminescence (PL), and Hall measurements have been performed and corresponded.

Info:

Periodical:

Solid State Phenomena (Volumes 124-126)

Edited by:

Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park

Pages:

339-342

DOI:

10.4028/www.scientific.net/SSP.124-126.339

Citation:

G. H. Kim et al., "Effect of Cu Dopant on the Electrical Property of ZnO Thin Films Deposited by Pulsed Laser Deposition", Solid State Phenomena, Vols. 124-126, pp. 339-342, 2007

Online since:

June 2007

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Price:

$35.00

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