Hydrogen Plasma Process to Reduce the Eu-Doped Sr2SiO4 Thin Films

Sung Hoon Kim; Hong Seop Yun; Hyun Kyung Yang; Kwang Duk Kim; Soung Soo Yi; Jung Hyun Jeong; Dong Uk Kim

doi:10.4028/www.scientific.net/SSP.124-126.335

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HomeSolid State PhenomenaSolid State Phenomena Vols. 124-126Hydrogen Plasma Process to Reduce the Eu-Doped...

Hydrogen Plasma Process to Reduce the Eu-Doped Sr₂SiO₄ Thin Films

Abstract:

As-grown Sr2SiO4:Eu thin films on Si (100) substrates have been reduced by hydrogen plasma reaction which was carried out by using radio frequency plasma enhanced chemical vapor deposition system. The photoluminescence spectra, the crystal structure and the surface morphologies of the plasma-reduced films were measured and compared with those of the as-grown films. At as-grown state, Eu3+ and Eu2+ ions co-exist so that the photoluminescence spectra of the films reveal several emission bands between 350 and 650 nm. They were due to f-f and f-d transitions within Eu3+ and Eu2+ ions. After the plasma-reduced process, the photoluminescence spectra of the films show a remarkable increase of blue-green emission from the transitions of Eu2+ ions and decrease of red emission from the transitions of Eu2+ ions.

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Periodical:

Solid State Phenomena (Volumes 124-126)

Pages:

335-338

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.124-126.335

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Online since:

June 2007

Authors:

Sung Hoon Kim, Hong Seop Yun, Hyun Kyung Yang, Kwang Duk Kim, Soung Soo Yi, Jung Hyun Jeong, Dong Uk Kim

Keywords:

Hydrogen Plasma, Photoluminescence (PL), Reduction, Sr₂SiO₄:Eu, Thin Film

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