Influence of Structural Parameters to Engineer the Band Gaps in Ternary Pnictide Semiconductors - Theory as a Tool

Rita John

doi:10.4028/www.scientific.net/SSP.124-126.57

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HomeSolid State PhenomenaSolid State Phenomena Vols. 124-126Influence of Structural Parameters to Engineer the...

Influence of Structural Parameters to Engineer the Band Gaps in Ternary Pnictide Semiconductors - Theory as a Tool

Abstract:

The band gap anomaly exhibited by ABC2 : A = Cd; B = Si,Ge,Sn; C = P,As pnictides with respect to their binary analogs GaP, Ga0.5In0.5P, InP, GaAs, Ga0.5In0.5As, InAs is studied using Tight Binding Linear Muffin Tin Orbital (TBLMTO) method as an investigating theoretical tool. The influence of the structural parameters, η and u are analyzed to enable one to tune energy gap to make tailor made compounds.

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Periodical:

Solid State Phenomena (Volumes 124-126)

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57-60

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.124-126.57

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Online since:

June 2007

Authors:

Rita John

Keywords:

Band Gap Anomaly, Crystal Field Splitting, Ternary Pnictides

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