Improvement of Surface Morphologies of Ru Thin Films by 2-Step MOCVD Process Using (2,4-Demethylpentadienyl)(Ethylcyclopentadienyl)Ruthenium and Oxygen

Beom Seok Kim; Cheol Seong Hwang; Hyeong Joon Kim

doi:10.4028/www.scientific.net/SSP.124-126.41

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HomeSolid State PhenomenaSolid State Phenomena Vols. 124-126Improvement of Surface Morphologies of Ru Thin...

Improvement of Surface Morphologies of Ru Thin Films by 2-Step MOCVD Process Using (2,4-Demethylpentadienyl)(Ethylcyclopentadienyl)Ruthenium and Oxygen

Abstract:

Ru thin films were grown by metalorganic chemical vapor deposition (MOCVD) on TiN and TEOS oxide substrates at 300oC using (2,4-demethylpentadienyl)(ethylcyclopenadienyl) ruthenium [Ru(DMPD)(EtCp)] and oxygen. Instead of conventional single step process, we investigated 2-step CVD process to enhance initial nucleation rate and reduce the incubation time for film formation. This process consisted of a seeding step, where high flow rate of oxygen and low process pressure were used, and a film growth step with low O2 flow rate and high pressure. The deposited Ru films by 2-step process have smooth surface morphologies compared to those by single step process.

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Periodical:

Solid State Phenomena (Volumes 124-126)

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41-44

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.124-126.41

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Online since:

June 2007

Authors:

Beom Seok Kim, Cheol Seong Hwang, Hyeong Joon Kim

Keywords:

2-Step Process, Ru MOCVD, Surface Morphology

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References

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