Dislocation-Free Shallow Trench Isolation (STI) Chemical Mechanical Polishing (CMP) Process for Embedded Flash Memory

Abstract:

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The ambient and denuded trench top corner at the step of gate oxidation play an important role to generate defect. Furthermore, dislocation-free flash process is proposed, and its mechanism as well. The impact on dislocation of the other processes is also discussed. And we knew that using of dry oxidation for gate oxide has the characteristic to reduce the dislocation. Consequently, the dislocation free wafer is obtained by changing gate oxide from wet to dry in manufacturing embedded flash.

Info:

Periodical:

Solid State Phenomena (Volumes 124-126)

Edited by:

Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park

Pages:

29-32

DOI:

10.4028/www.scientific.net/SSP.124-126.29

Citation:

N. H. Kim et al., "Dislocation-Free Shallow Trench Isolation (STI) Chemical Mechanical Polishing (CMP) Process for Embedded Flash Memory", Solid State Phenomena, Vols. 124-126, pp. 29-32, 2007

Online since:

June 2007

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Price:

$35.00

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