Role of SrRuO3 Buffer Layers in Enhancing Resistance Changing of Pr0.7Ca0.3MnO3 Films

Seung Woo Han; Kyoung Wan Park; Jung Hyun Sok

doi:10.4028/www.scientific.net/SSP.124-126.17

Paper Titles

Dependence of Thermal-Cycling-Induced Deformation on Passivation Morphology in Plastic-Encapsulated Microelectronic Devices
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Reliability of Electroplated Sn-37Pb Solder Bumps with Different Under Bump Metallizations (UBMs) during High Temperature Storage Test
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Temperature Dependence of Dominant Hillock Phases during Electromigration of Eutectic SnPb Solder Lines
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Electrical Properties of ZrO₂ Capacitor Dielectrics Deposited by rf Magnetron Sputtering
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Role of SrRuO₃ Buffer Layers in Enhancing Resistance Changing of Pr_0.7Ca_0.3MnO₃ Films
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Electrical Switching Characteristics of Nitrogen Doped Ge₂Sb₂Te₅ Based Phase Change Random Access Memory Cell
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Bump Formation and Flip Chip Processes for RF System-on-Packages
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Dislocation-Free Shallow Trench Isolation (STI) Chemical Mechanical Polishing (CMP) Process for Embedded Flash Memory
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Dependency of Electrical Characteristics on Au Nano-Crystal Size for Non-Volatile Memory Fabricated with Au Nano-Crystal Embedded in PVK(Poly(N-Vinylcarbazole)) Layer
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Role of SrRuO₃ Buffer Layers in Enhancing Resistance Changing of Pr_0.7Ca_0.3MnO₃ Films

Abstract:

Resistance-switching behaviors of the Pr0.7Ca0.3MnO3(PCMO) films based metalinsulator- metal (MIM) devices has been investigated. In this work, resistance change of PCMO films deposited with SRO buffer layers by using RF-magnetron sputtering system investigated at room temperature. The ratio of the resistance change of the PCMO films with SRO buffer layers in the high-resistance state to that in the low-resistance state turned out to be much lager than that of the PCMO films without SRO buffer layers. Moreover, The reproducible property of the fabricated samples were improved. Origin of resistance change is not clear, but PCMO films with SRO buffer layers have the possibility of application for nonvolatile memory device.