Electrical Properties of ZrO2 Capacitor Dielectrics Deposited by rf Magnetron Sputtering

Chong Mu Lee; Keun Bin Yim; Anna Park; Ho Jin Kim

doi:10.4028/www.scientific.net/SSP.124-126.13

Paper Titles

Dependence of Thermal-Cycling-Induced Deformation on Passivation Morphology in Plastic-Encapsulated Microelectronic Devices
p.1

Reliability of Electroplated Sn-37Pb Solder Bumps with Different Under Bump Metallizations (UBMs) during High Temperature Storage Test
p.5

Temperature Dependence of Dominant Hillock Phases during Electromigration of Eutectic SnPb Solder Lines
p.9

Electrical Properties of ZrO₂ Capacitor Dielectrics Deposited by rf Magnetron Sputtering
p.13

Role of SrRuO₃ Buffer Layers in Enhancing Resistance Changing of Pr_0.7Ca_0.3MnO₃ Films
p.17

Electrical Switching Characteristics of Nitrogen Doped Ge₂Sb₂Te₅ Based Phase Change Random Access Memory Cell
p.21

Bump Formation and Flip Chip Processes for RF System-on-Packages
p.25

Dislocation-Free Shallow Trench Isolation (STI) Chemical Mechanical Polishing (CMP) Process for Embedded Flash Memory
p.29

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Electrical Properties of ZrO₂ Capacitor Dielectrics Deposited by rf Magnetron Sputtering

Abstract:

The structure and electrical properties of ZrO2 dielectric thin films deposited by rf magnetron sputtering were investigated. The fixed oxide charge and interface trap density at the ZrO2/Si interface is substantially decreased by annealing at 500 C. Annealing treatment also enhances the quality of the film by reducing leakage current. The carrier transport mechanism in the ZrO2 film is dominated by thermionic emission.