Electrical Properties of ZrO2 Capacitor Dielectrics Deposited by rf Magnetron Sputtering
The structure and electrical properties of ZrO2 dielectric thin films deposited by rf magnetron sputtering were investigated. The fixed oxide charge and interface trap density at the ZrO2/Si interface is substantially decreased by annealing at 500 C. Annealing treatment also enhances the quality of the film by reducing leakage current. The carrier transport mechanism in the ZrO2 film is dominated by thermionic emission.
Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park
C. M. Lee et al., "Electrical Properties of ZrO2 Capacitor Dielectrics Deposited by rf Magnetron Sputtering", Solid State Phenomena, Vols. 124-126, pp. 13-16, 2007