Dependency of Electrical Characteristics on Au Nano-Crystal Size for Non-Volatile Memory Fabricated with Au Nano-Crystal Embedded in PVK(Poly(N-Vinylcarbazole)) Layer

Chang Kyu Lee; Jong Sung Kwon; In Chul Na; Byung Il Han; Young Min Kim; Jea Gun Park

doi:10.4028/www.scientific.net/SSP.124-126.33

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HomeSolid State PhenomenaSolid State Phenomena Vols. 124-126Dependency of Electrical Characteristics on Au...

Dependency of Electrical Characteristics on Au Nano-Crystal Size for Non-Volatile Memory Fabricated with Au Nano-Crystal Embedded in PVK(Poly(N-Vinylcarbazole)) Layer

Abstract:

We demonstrated a nonvolatile memory fabricated with the sandwich device structure of Al/Au nano-crystals embedded in the PVK/Al. The bi-stable conduction switching characteristic (Ion/Ioff ratio) was >1x102, depending on Au nano-crystal size. The size and distribution of Au nano-crystals were determined by the inserted Au-layer thickness between PVK layers. The size of Au nano-crystals increased with the inserted Au-layer thickness. The uniform distribution of isolated Au nano-crystals was obtained with 5 nm of the inserted Au-layer thickness.

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Periodical:

Solid State Phenomena (Volumes 124-126)

Pages:

33-36

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.124-126.33

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Online since:

June 2007

Authors:

Chang Kyu Lee, Jong Sung Kwon, In Chul Na, Byung Il Han, Young Min Kim, Jea Gun Park

Keywords:

Au Nano Crystal, Bistability, Curing, Non-Volatile Memory (NVM), PBD, PVK

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