Thermal Stress Model for Phase Change Random Access Memory

Abstract:

Article Preview

Thermal stress model considering the effect of phase transformation is proposed for Phase-Change Random Access Memory (PRAM). The results of simulation show that the high level of stress is generated on the junction where Ge2Sb2Te5(GST), TiN and SiO2 meet together. The high level of stress can also be observed in the interface between TiN and SiO2. From simulation results, it can be predictable that delamination between GST and TiN can occur during operation of PRAM. It is expected that the simulation model, which has been developed in this research, is very useful tool for PRAM device design.

Info:

Periodical:

Solid State Phenomena (Volumes 124-126)

Edited by:

Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park

Pages:

37-40

DOI:

10.4028/www.scientific.net/SSP.124-126.37

Citation:

S. S. Kim et al., "Thermal Stress Model for Phase Change Random Access Memory", Solid State Phenomena, Vols. 124-126, pp. 37-40, 2007

Online since:

June 2007

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.