Thermal Stress Model for Phase Change Random Access Memory

Sung Soon Kim; Jun Hyun Bae; Woo Hyuck Do; Kyun Ho Lee; Young Tae Kim; Young Kwan Park; Jeong Taek Kong; Hong Lim Lee

doi:10.4028/www.scientific.net/SSP.124-126.37

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HomeSolid State PhenomenaSolid State Phenomena Vols. 124-126Thermal Stress Model for Phase Change Random...

Thermal Stress Model for Phase Change Random Access Memory

Abstract:

Thermal stress model considering the effect of phase transformation is proposed for Phase-Change Random Access Memory (PRAM). The results of simulation show that the high level of stress is generated on the junction where Ge2Sb2Te5(GST), TiN and SiO2 meet together. The high level of stress can also be observed in the interface between TiN and SiO2. From simulation results, it can be predictable that delamination between GST and TiN can occur during operation of PRAM. It is expected that the simulation model, which has been developed in this research, is very useful tool for PRAM device design.

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Periodical:

Solid State Phenomena (Volumes 124-126)

Pages:

37-40

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.124-126.37

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Online since:

June 2007

Authors:

Sung Soon Kim, Jun Hyun Bae, Woo Hyuck Do, Kyun Ho Lee, Young Tae Kim, Young Kwan Park, Jeong Taek Kong, Hong Lim Lee

Keywords:

Ge₂Sb₂Te₅, PRAM, Simulation, Thermal Stress

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