Initial Growth Mode of GaN Film on Stepped Sapphire

Min Su Yi; Tae Sik Cho; Hyun Hwi Lee

doi:10.4028/www.scientific.net/SSP.124-126.61

Paper Titles

AEM Study on the Phase Transformation of Nickel Silicides in the Ni_1-xTa_x/Si System
p.45

Effects of Electroplating Parameters on the Defects of Copper via for 3D SiP
p.49

Surface Acoustic Wave Device on (AlN/LGS) Substrate
p.53

Influence of Structural Parameters to Engineer the Band Gaps in Ternary Pnictide Semiconductors - Theory as a Tool
p.57

Initial Growth Mode of GaN Film on Stepped Sapphire
p.61

Etching Mechanism of ZnO Thin Films in Inductively Coupled Plasma
p.65

Growth of Ga-Doped ZnO Bilayer by RF Magnetron Sputtering with Different Atmospheres
p.69

Fabrication of Flexible CIGS Solar Cell on Stainless Steel Substrate by co-Evaporation Process
p.73

ZnO Nanowalls and Nanocolumns Grown by Metalorganic Chemical Vapor Deposition
p.77

HomeSolid State PhenomenaSolid State Phenomena Vols. 124-126Initial Growth Mode of GaN Film on Stepped...

Initial Growth Mode of GaN Film on Stepped Sapphire

Abstract:

The initial GaN growth mode on stepped sapphires by plasma enhanced metal organic molecular beam epitaxy (PEMOMBE) has been analyzed using in-situ, real time synchrotron x-ray diffraction and x-ray absorption. The sapphire substrate annealed at high temperature had flat terraces and regular atomic steps. The crystal quality and the vicinal angle of sapphire substrate had an effect on the width of terraces and the step arrangement. The initial growth mode of the GaN film on the regular atomic step (AS) surface was the layer-by-layer mode and changed to the 3D growth mode within 2 bilayer thickness. In the meanwhile, the growth mode of the GaN film grown on the sapphire with random roughness (RR) surface made the flat surface in the early stage and changed the 3D growth mode. As increasing the film thickness, the nucleation layer grows strain-free hexagonal GaN on stepped sapphires

You might also be interested in these eBooks

Advances in Nanomaterials and Processing

View Preview

Info:

Periodical:

Solid State Phenomena (Volumes 124-126)

Pages:

61-64

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.124-126.61

Citation:

Cite this paper

Online since:

June 2007

Authors:

Min Su Yi, Tae Sik Cho, Hyun Hwi Lee

Keywords:

Gallium Nitride (GaN), Growth Mode, In Situ, Initial Growth, Stepped Sapphire

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] Hadis Morkoc, Jour. Mat. Sci., Vol 12, (2001), p.677.

Google Scholar

[2] R. Dimitrov, M. Murphy, J. Smart, W. Schaff, J. R. Shealy, L. F. Eastman, O. Amabacher and M. Stutzmann, J. Appl. Phys., Vol 87(7)(2000), p.3375.

Google Scholar

[3] H. Z. Xu, Z.G. Wang, M. Kawbe, I. Harrison, B. J. Ansell, and C. T. Foxon, Journal of crystal growth, Vol 218, (2000), p.1.

Google Scholar

[4] L. K. Li, B. Turk, W. I. Wang, S. Syed, D. Simonian, and H. L. Stormer, Appl. Phys. Lett., Vol 76, (2000), p.742.

Google Scholar

[5] Sung-Hwan Cho, Hajime Okumura, Katsuhiro Akimoto, Appl. Phys. Lett., Vol 76, (2000), p.3861.

Google Scholar

[6] R. L. Headrick, S. Kycia, Y. K. Park, A. R. Woll, and J. D. Brock, Phys. Rev. B, Vol 54, (1996), p.14686.

Google Scholar

[7] M. Yoshimoto, T. Maeda, T. Ohnishi, H. Koinuma, O. Lshiyama, M. Shinohara, M. Kubo, R. Miura, and A. Miyamoto, Appl. Phys. Lett., Vol 67, (1995), p.2615.

DOI: 10.1063/1.114313

Google Scholar

[8] �A. R. Woll, R. L. Headrick, S. Kycia, and J. D. Brock, Phys. Rev. Lett., Vol 83, (1999), p.4349.

Google Scholar

[9] D. Y. Noh, Y. Hwu, and K. S. Liang, Phys. Rev. B, Vol 51, (1997), p.7080.

Google Scholar

[10] M. S. Yi, H. H. Lee, D. J. Kim, S. J. Park, D. Y. Noh, C. C. Kim, J. H. Je, Appl. Phys. Lett. Vol 75, (1999), p.2187.

Google Scholar

[11] @�M. S. Yi, and D. Y. Noh, Appl. Phys. Lett, Vol 78, (2001), p.2443.

Google Scholar

[12] � Zhiiang Li, Hyungjin Bang, Guanxi Piao, Junji Sawahata, Katsuhiro Akimoto, Hiroyuki Kinoshita, Kentich Wantanabe, Journal of crystal growth, Vol 234, (2002), p.25.

Google Scholar