Fabrication of Flexible CIGS Solar Cell on Stainless Steel Substrate by co-Evaporation Process

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Abstract:

Silicone dioxide (SiO2) layer as an electrical insulator and diffusion barrier was deposited on a flexible stainless steel substrate by plasma enhanced CVD process. And we deposited Mo/Na-doped Mo bi-layer back contact on the oxide layer in order to supply Na into the CIGS absorber. Then we deposited CIGS layer by three-stage process using elemental co-evaporation method and completed the solar cell fabrication. Without antireflection coating, the best CIGS solar cell on the stainless steel showed the conversion efficiency of 10.57 % with Jsc = 33.38 mA/cm2 and Voc = 0.519 V and FF = 0.61 for an active area of 0.45 cm2.

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Solid State Phenomena (Volumes 124-126)

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73-76

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June 2007

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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DOI: 10.1016/s0040-6090(01)01516-4

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