Deep Level Defects in AlxGa1-xN/GaN Heterointerfaces Grown by Molecular Beam Epitaxy
Capacitance-voltage (C-V) and Deep-level transient spectroscopy (DLTS) measurements on AlxGa1-xN/GaN heterostructures were performed to investigate the existence of the carriers and the behavior of the deep levels in the AlxGa1-xN/GaN heterointerface. The C-V depth profile showed that the carrier concentration existed at the AlxGa1-xN/GaN heterointerface was 4 × 1012 cm2. The DLTS results showed two deep levels. The capture cross-section of the deep level related to the two-dimensional electron gas decreased with increasing depth, resulting from the existence of the different deep levels in each region.
Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park
H. C. Jeon et al., "Deep Level Defects in AlxGa1-xN/GaN Heterointerfaces Grown by Molecular Beam Epitaxy", Solid State Phenomena, Vols. 124-126, pp. 89-92, 2007