Deep Level Defects in AlxGa1-xN/GaN Heterointerfaces Grown by Molecular Beam Epitaxy

Hee Chang Jeon; Chan Jin Park; Hoon Young Cho; Tae Won Kang; Tae Whan Kim; Jae Eung Oh

doi:10.4028/www.scientific.net/SSP.124-126.89

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HomeSolid State PhenomenaSolid State Phenomena Vols. 124-126Deep Level Defects in AlxGa1-xN/GaN...

Deep Level Defects in Al_xGa_1-xN/GaN Heterointerfaces Grown by Molecular Beam Epitaxy

Abstract:

Capacitance-voltage (C-V) and Deep-level transient spectroscopy (DLTS) measurements on AlxGa1-xN/GaN heterostructures were performed to investigate the existence of the carriers and the behavior of the deep levels in the AlxGa1-xN/GaN heterointerface. The C-V depth profile showed that the carrier concentration existed at the AlxGa1-xN/GaN heterointerface was 4 × 1012 cm2. The DLTS results showed two deep levels. The capture cross-section of the deep level related to the two-dimensional electron gas decreased with increasing depth, resulting from the existence of the different deep levels in each region.

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Solid State Phenomena (Volumes 124-126)

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89-92

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.124-126.89

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Online since:

June 2007

Authors:

Hee Chang Jeon, Chan Jin Park, Hoon Young Cho, Tae Won Kang, Tae Whan Kim, Jae Eung Oh

Keywords:

Al_xGa_1-xN/GaN Heterointerface, Deep Level, Two Dimensional Electron Gas Region

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