Improvement of the Reverse Characteristics of Ti/4H-SiC Schottky Barrier Diodes by Thermal Treatments

Abstract:

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Ti/4H-SiC Schottky barrier diodes were fabricated under 500, 750, 1000 °C thermal treatment conditions. After the heat treatment at 750 °C, formation of TiC(111) and Ti5Si3(210) phases was confirmed by XRD analysis. Formation of Ti carbide and silicide phase increased breakdown voltage VB from 545 V to 830 V. An improvement of breakdown voltage (VB) was observed in case of the thermal treatment in nitrogen ambient at 750 °C for 2 min. Ideality factor (n), specific on resistance (Ron), and Schottky barrier height (Φb) were 1.04, 2.7 m-cm2, 1.33 eV respectively.

Info:

Periodical:

Solid State Phenomena (Volumes 124-126)

Edited by:

Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park

Pages:

105-108

DOI:

10.4028/www.scientific.net/SSP.124-126.105

Citation:

D. H. Kim et al., "Improvement of the Reverse Characteristics of Ti/4H-SiC Schottky Barrier Diodes by Thermal Treatments", Solid State Phenomena, Vols. 124-126, pp. 105-108, 2007

Online since:

June 2007

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Price:

$35.00

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