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Improvement of the Reverse Characteristics of Ti/4H-SiC Schottky Barrier Diodes by Thermal Treatments

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Abstract:

Ti/4H-SiC Schottky barrier diodes were fabricated under 500, 750, 1000 °C thermal treatment conditions. After the heat treatment at 750 °C, formation of TiC(111) and Ti5Si3(210) phases was confirmed by XRD analysis. Formation of Ti carbide and silicide phase increased breakdown voltage VB from 545 V to 830 V. An improvement of breakdown voltage (VB) was observed in case of the thermal treatment in nitrogen ambient at 750 °C for 2 min. Ideality factor (n), specific on resistance (Ron), and Schottky barrier height (Φb) were 1.04, 2.7 m-cm2, 1.33 eV respectively.

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Periodical:

Solid State Phenomena (Volumes 124-126)

Pages:

105-108

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.124-126.105

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Online since:

June 2007

Authors:

Dae Hwan Kim, Jong Ho Lee, Jeong Hyun Moon, Myong Suk Oh, Ho Keun Song, Jeong Hyuk Yim, Jae Bin Lee, Hyeong Joon Kim

Keywords:

Breakdown Voltage, Thermal Treatment

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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