Improvement of the Reverse Characteristics of Ti/4H-SiC Schottky Barrier Diodes by Thermal Treatments
Ti/4H-SiC Schottky barrier diodes were fabricated under 500, 750, 1000 °C thermal treatment conditions. After the heat treatment at 750 °C, formation of TiC(111) and Ti5Si3(210) phases was confirmed by XRD analysis. Formation of Ti carbide and silicide phase increased breakdown voltage VB from 545 V to 830 V. An improvement of breakdown voltage (VB) was observed in case of the thermal treatment in nitrogen ambient at 750 °C for 2 min. Ideality factor (n), specific on resistance (Ron), and Schottky barrier height (Φb) were 1.04, 2.7 m-cm2, 1.33 eV respectively.
Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park
D. H. Kim et al., "Improvement of the Reverse Characteristics of Ti/4H-SiC Schottky Barrier Diodes by Thermal Treatments", Solid State Phenomena, Vols. 124-126, pp. 105-108, 2007