Fabrication of 4H-SiC Planar MESFETs on High-Purity Semi-Insulating Substrates

Abstract:

Article Preview

4H-SiC planar MESFETs were fabricated using ion-implantation on high-purity semi-insulating substrate, and their DC and RF performances were characterized. A modified RCA method was used to clean the substrate before each procedure. Sacrificial oxide was grown after channel layer etching to eliminate plasma damage to the gate region. A thin, thermal oxide layer was grown to passivate the surface and then a thick field oxide was deposited by CVD. The maximum oscillation frequency of 26.4 GHz and the cut-off frequency of 7.2 GHz were obtained. The power gain was 8.4 dB and the output power was 2.8 W/mm at 2 GHz.

Info:

Periodical:

Solid State Phenomena (Volumes 124-126)

Edited by:

Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park

Pages:

109-112

DOI:

10.4028/www.scientific.net/SSP.124-126.109

Citation:

J. H. Yim et al., "Fabrication of 4H-SiC Planar MESFETs on High-Purity Semi-Insulating Substrates", Solid State Phenomena, Vols. 124-126, pp. 109-112, 2007

Online since:

June 2007

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.