Fabrication of 4H-SiC Planar MESFETs on High-Purity Semi-Insulating Substrates

Jeong Hyuk Yim; Ho Keun  Song; Jeong Hyun Moon; Han Seok Seo; Jong Ho Lee; Hoon Joo Na; Jae Bin Lee; Hyeong Joon Kim

doi:10.4028/www.scientific.net/SSP.124-126.109

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HomeSolid State PhenomenaSolid State Phenomena Vols. 124-126Fabrication of 4H-SiC Planar MESFETs on...

Fabrication of 4H-SiC Planar MESFETs on High-Purity Semi-Insulating Substrates

Abstract:

4H-SiC planar MESFETs were fabricated using ion-implantation on high-purity semi-insulating substrate, and their DC and RF performances were characterized. A modified RCA method was used to clean the substrate before each procedure. Sacrificial oxide was grown after channel layer etching to eliminate plasma damage to the gate region. A thin, thermal oxide layer was grown to passivate the surface and then a thick field oxide was deposited by CVD. The maximum oscillation frequency of 26.4 GHz and the cut-off frequency of 7.2 GHz were obtained. The power gain was 8.4 dB and the output power was 2.8 W/mm at 2 GHz.

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Periodical:

Solid State Phenomena (Volumes 124-126)

Pages:

109-112

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.124-126.109

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Online since:

June 2007

Authors:

Jeong Hyuk Yim, Ho Keun Song, Jeong Hyun Moon, Han Seok Seo, Jong Ho Lee, Hoon Joo Na, Jae Bin Lee, Hyeong Joon Kim

Keywords:

High Purity Semi-Insulating (HPSI) Substrate, Ion Implantation, MESFET, Silicon Carbide (SiC)

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References

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