Interrelation between Strain Relaxation and InxAl1-xAs Compositional Graded Step Buffer Layers on GaAs Substrate Grown by Molecular Beam Epitaxy

Sook Hyun Hwang; Yu Mi Park; Hoon Ha Jeon; Kyung Seok Noh; Jae Kyu Kim; Joon He Moon; Han Jung Song; Jae Young Leem; Min Hyon Jeon

doi:10.4028/www.scientific.net/SSP.124-126.127

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HomeSolid State PhenomenaSolid State Phenomena Vols. 124-126Interrelation between Strain Relaxation and...

Interrelation between Strain Relaxation and In_xAl_1-xAs Compositional Graded Step Buffer Layers on GaAs Substrate Grown by Molecular Beam Epitaxy

Abstract:

We have grown delta-doped In0.5Ga0.5As /In0.5Al0.5As heterostructures on GaAs substrate applying with InxAl1-xAs compositional graded-step buffers, called metamorphic structures, grown by molecular beam epitaxy. Three types of buffer layers with different compositional gradients and thicknesses have designed to investigate the influence of the strain relaxation process. We characterized the samples by using transmission electron microscopy, triple-axis X-ray diffraction and Hall measurement. Two samples with different compositional gradient show almost same results in electrical properties. On the other hand, it is found that samples with different step thicknesses had shown the large differences in epilayer tilt and mosaic spread in the step-graded buffers. These results indicate that there exists an interrelation between the strain-relaxed buffer and 2DEG transport properties.

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Solid State Phenomena (Volumes 124-126)

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127-130

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https://doi.org/10.4028/www.scientific.net/SSP.124-126.127

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June 2007

Authors:

Sook Hyun Hwang, Yu Mi Park, Hoon Ha Jeon, Kyung Seok Noh, Jae Kyu Kim, Joon He Moon, Han Jung Song, Jae Young Leem, Min Hyon Jeon

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GaAs, InAlAs/InGaAs, Metamorphic Structures, Step Graded Buffer, Strain Relaxation

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References

[1] Supriyo Datta and Biswajit Das, Appl. Phys. Lett. 56 (7), pp.665-667 (1990).

Google Scholar

[2] M. Chertouk, H. Heiss, D. Xu, S. Kraus, W. Klein, G. Böhm, G. Tränkle, and G. Weimann, Senior Member, IEEE, IEEE ELECTRON DEVICE LETTERS, VOL. 17, No. 6, pp.273-275, June (1996).

DOI: 10.1109/55.496455

Google Scholar

[3] Min Han, Myung-Sik Son, Jung-Hun Oh, Bok-Hyung Lee, Mi-Ra Kim, Sam-Dong Kim, Jin-Koo Rhee, Microelectronics Journal. 35, pp.973-983, (2004).

DOI: 10.1109/apmc.2005.1607086

Google Scholar

[4] D. Lubyshev, W. K. Liu, T. R. Stewart, A. B. Cornfeld, and X. -M. Fang, J. Vac. Sci. Technol. B 19 (4), pp.1510-1514, (2001).

Google Scholar

[5] J. A. Olsen and E. L. Hu, J. Appl. Phys. 79 (7), pp.3578-3584, (1996).

Google Scholar

[6] S. Bollaert, Y. Cordier, M. Zaknoune, H. Happy, V. Hoel, S. Lepilliet, D. Théron, A. Cappy, SolidState Electronics 44, pp.1021-1027, (2000).

DOI: 10.1016/s0038-1101(99)00329-9

Google Scholar

[7] T. Mishima, K. Higuchi, M. Mori, M. Kudo, Journal of Crystal Growth 150, pp.1230-1235, (1995).

Google Scholar

[8] R. S. Goldman, K. L. Kavanagh, and H. H. Wieder, J. Vac. Sci. Technol. B 14 (4), pp.3035-3039, (1996).

Google Scholar

[9] E Hoppensteiner, A Schuh, G Bauer, V Holý, G P Watson and E A Fitzgerald, J. Phys. D : Appl. Phys., 28, pp. A114-A119, 1995 REVISED VERSION January (2007).

Google Scholar