Multi-Component ZnO-In2O3-SnO2Thin Films Deposited by RF Magnetron Co-Sputtering

Chang Sik Son; Jae Sung Hur; Byoung Hoon Lee; Sang Yul Back; Jeong Seop Lee; Jung Bin Song; In Hoon Choi

doi:10.4028/www.scientific.net/SSP.124-126.119

Paper Titles

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Fabrication of 4H-SiC Planar MESFETs on High-Purity Semi-Insulating Substrates
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Growth and Characterization of GaN Nano-Column Grown on Si (111) Substrate Using Au+Ga Alloy Seeding Method by MOCVD
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Multi-Component ZnO-In₂O₃-SnO₂Thin Films Deposited by RF Magnetron Co-Sputtering
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Comparison of Semiconductor Radiation Detectors for Large Area X-Ray Imaging
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Interrelation between Strain Relaxation and In_xAl_1-xAs Compositional Graded Step Buffer Layers on GaAs Substrate Grown by Molecular Beam Epitaxy
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Characteristics of Al-Doped ZnO Transparent Conductive Oxide Films for Solar Cell Applications
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Growth and Characterizations of Electrochemically Deposited ZnO Thin Films
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HomeSolid State PhenomenaSolid State Phenomena Vols. 124-126Multi-Component ZnO-In2O3-SnO2Thin Films Deposited...

Multi-Component ZnO-In₂O₃-SnO₂Thin Films Deposited by RF Magnetron Co-Sputtering

Abstract:

Multi-component ZnO-In2O3-SnO2 thin films have been prepared by RF magnetron co-sputtering using targets composed of In4Sn3O12(99.99%) [1] and ZnO(99.99%) at room temperature. In4Sn3O12 contains less In than commercial ITO, so that it lowers cost. Working pressure was held at 3 mtorr flowing Ar gas 20 sccm and sputtering time was 30 min. RF power ratio [RF1 / ( RF1 + RF2 )] of two guns in sputtering system was varied from 0 to 1. Each RF power was varied 0~100W respectively. The thicknesses of the films were 350~650nm. The composition concentrations of the each film were measured with EPMA and AES. The low resistivity of 1-2 × 10-3 and an average transmittance above 80% in the visible range were attained for the films over a range of δ (0.3 ≤ δ ≤ 0.5). The films also showed a high chemical stability with time and a good uniformity.