Comparison of Semiconductor Radiation Detectors for Large Area X-Ray Imaging

Chi Won Choi; Ji Koon Park; Sang Sik Kang; Sung Ho Cho; Kyung Jin Kim; Sung Kwang Park; Heung Kook Choi; Jae Hyung Kim; Sang Hee Nam

doi:10.4028/www.scientific.net/SSP.124-126.123

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HomeSolid State PhenomenaSolid State Phenomena Vols. 124-126Comparison of Semiconductor Radiation Detectors...

Comparison of Semiconductor Radiation Detectors for Large Area X-Ray Imaging

Abstract:

We have developed a large area, flat panel detector for general applications to digital radiology. This paper presents the x-ray detection characteristics with various semiconductor radiation detectors (HgI2, PbI2, PbO, CdTe) derived by a novel wet coating process for large area deposition. The wet coating process could easily be made from large area films with printing paste mixed with semiconductor and binder material at room temperature. X-ray performance data such as dark current, sensitivity and signal to noise ratio (SNR) were evaluated. The HgI2 semiconductor was shown in much lower dark current than the others, and also has the best sensitivity. In this paper, reactivity and combination characters of semiconductor and binder material that affect electrical and x-ray detection properties would be verified through our experimental results.

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Solid State Phenomena (Volumes 124-126)

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123-126

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.124-126.123

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Online since:

June 2007

Authors:

Chi Won Choi, Ji Koon Park, Sang Sik Kang, Sung Ho Cho, Kyung Jin Kim, Sung Kwang Park, Heung Kook Choi, Jae Hyung Kim, Sang Hee Nam

Keywords:

CdTe, Hgl₂ (mercuric iodide), Pbl₂, PbO, Semiconductor

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