Atomic Arrangement and Formation Mechanism of c-Axis Oriented ZnO Thin Films Grown on p-Si Substrates
The X-ray diffraction (XRD) pattern for the ZnO films grown on Si (100) substrates indicates that the grown ZnO films have a strong c-axis orientation. The pole figure indicates that ZnO thin films have columnars with the grains of the  crystallographic axis perpendicular to the Si (100) substrate, indicative of the random rotational orientations along the c-axis. Selected area electron diffraction pattern (SADP) of the ZnO/Si (100) heterostructures shows that the ZnO preferential oriented film is formed on the Si substrate. A possible atomic arrangement of the crystal structure and the formation mechanism of the c-axis orientated ZnO thin films grown on p-Si substrates are discussed on the basis of the XRD, the pole figure, and SADP results.
Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park
N.K. Park et al., "Atomic Arrangement and Formation Mechanism of c-Axis Oriented ZnO Thin Films Grown on p-Si Substrates", Solid State Phenomena, Vols. 124-126, pp. 93-96, 2007