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Atomic Arrangement and Formation Mechanism of c-Axis Oriented ZnO Thin Films Grown on p-Si Substrates

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Abstract:

The X-ray diffraction (XRD) pattern for the ZnO films grown on Si (100) substrates indicates that the grown ZnO films have a strong c-axis orientation. The pole figure indicates that ZnO thin films have columnars with the grains of the [0002] crystallographic axis perpendicular to the Si (100) substrate, indicative of the random rotational orientations along the c-axis. Selected area electron diffraction pattern (SADP) of the ZnO/Si (100) heterostructures shows that the ZnO preferential oriented film is formed on the Si substrate. A possible atomic arrangement of the crystal structure and the formation mechanism of the c-axis orientated ZnO thin films grown on p-Si substrates are discussed on the basis of the XRD, the pole figure, and SADP results.

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Periodical:

Solid State Phenomena (Volumes 124-126)

Pages:

93-96

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.124-126.93

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Online since:

June 2007

Authors:

N.K. Park, H.S. Lee, Y.S. No, Tae Whan Kim, Jeong Yong Lee, W.K. Choi

Keywords:

Atomic Arrangement, Formation Mechanism, Si Substrate, Structural Property, ZnO Film

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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