Characteristics of Self-Aligned InP/InGaAs Heterojunction Bipolar Transistor Assisted by Silicon Nitride Sidewall

Abstract:

A reliable fabrication method for providing close spacing between the emitter mesa and the base contact metal of InP-based heterojunction bipolar transistor is disclosed. The silicon nitride sidewall was formed on the emitter electrode and mesa periphery. It was used as a mask for emitter mesa etching and also as an overhang to self-align the base contact with respect to the emitter mesa. The self-aligned device fabricated by this technique exhibited better high-frequency performances with fT of 138 GHz and fmax of 143 GHz, respectively, superior to the re-aligned one on the same epitaxy wafer.

• Periodical: Solid State Phenomena (Volumes 124-126)
• Pages: 97-100
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.124-126.97
• Online since: June 2007
• Authors: Byoung Gue Min, Jong Min Lee, Seong Il Kim, Chul Won Ju, Kyung Ho Lee
• Keywords: Herojunction Bipolar Transistor (HBT), InGaAs, InP, Self-Align, Sidewall

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