Paper Titles
Engineering of Dislocation-Loops for Light Emission from Silicon Diodes
p.303
A Comparative Analysis of Structural Defect Formation in Si+ Implanted and then Plasma Hydrogenated and in H+ Implanted Crystalline Silicon
p.309
The Temperature Evolution of the Hydrogen Plasma Induced Structural Defects in Crystalline Silicon
p.315
Electrical Uniformity of Direct Silicon Bonded Wafer Interfaces
p.321
Structure of Magnetically Ordered Si:Mn
p.327
Influence of Low-Temperature Argon Ion-Beam Treatment on the Photovoltage Spectra of Standard Cz Si Wafers
p.333
Defect Engineering for SIMOX Processing
p.339
Hydrogen Interaction with Point Defects in the Si-SiO2 Structures and its Influence on the Interface Properties
p.345
IR Studies on the Interaction between Thermal and Radiation Defects in Silicon
p.351

Structure of Magnetically Ordered Si:Mn

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Abstract:

The structure studies of single crystalline silicon implanted at 340 K or 610 K with Mn+ ions (Si:Mn) and subsequently processed under atmospheric and enhanced hydrostatic pressure at up to 1270 K are reported. The defect structure was determined by an analysis of X-ray diffuse scattering around the 004 reciprocal lattice point and by electron microscopy. High resolution X-ray diffraction techniques based on the conventional source of radiation were used for this purpose. The crystal structure of Si:Mn and the Si1-xMnx precipitates in the implantation – disturbed layer were studied by synchrotron radiation diffraction in the grazing incidence geometry. Processing of Si:Mn results in crystallization of amorphous Si within the buried implantation – disturbed layer and in formation of Mn4Si7 precipitates. Structural changes are dependent both on temperature of the Si substrate at implantation and on processing parameters.

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Periodical:

Solid State Phenomena (Volumes 131-133)

Pages:

327-332

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.131-133.327

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Online since:

October 2007

Authors:

Jadwiga Bak-Misiuk, Elżbieta Dynowska, Przemyslaw Romanowski, A. Shalimov, Andrzej Misiuk, S. Kret, P. Dłużewski, J. Domagala, Wolfgang Caliebe, Jerzy Dabrowski, M. Prujszczyk

Keywords:

Annealing, High-Pressure, Implantation, Magnetic Ordering, Manganese, Silicon, Structure

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© 2008 Trans Tech Publications Ltd. All Rights Reserved

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