Metallic Contamination Control in Leading-Edge ULSI Manufacturing

Ayako Shimazaki; Hiroki Sakurai; Masao Iwase; Reiko Yoshimura; Tsukasa Tada

doi:10.4028/www.scientific.net/SSP.145-146.115

Paper Titles

Complementary Metrology within a European Joint Laboratory
p.97

Highly Sensitive Detection of Inorganic Contamination
p.101

Trace Metallic Contamination Analysis on Wafer Edge and Bevel by TXRF and VPD-TXRF
p.105

Surface Potential Difference Imaging Applied to Wet Clean Monitoring
p.109

Metallic Contamination Control in Leading-Edge ULSI Manufacturing
p.115

Molybdenum Contamination in Silicon: Detection and Impact on Device Performances
p.123

Developing a High Volume Manufacturing Wet Clean Process to Remove BF₂ Implant Induced Molybdenum Contamination
p.127

Impact of Metal-Ion Contaminated Silica Particles on Gate Oxide Integrity
p.131

Monitoring System for Airborne Molecular Contamination (AMC) in Semiconductor Manufacturing Areas and Micro-Environments
p.135

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Metallic Contamination Control in Leading-Edge ULSI Manufacturing

Abstract:

Contamination control has become a high-centered issue for the fabrication yield, performance and reliability of leading-edge ULSI devices. With the progress of sizing down dimensions in higher-density devices, complicated device structures and various novel electronic materials have been introduced, particularly in the latest devices such as CMOS and nonvolatile memory LSIs (Table I). On the other hand, high productivity is a necessity when you consider QTAT (quick turnaround time) and cost-effective flexible ULSI manufacturing lines. Therefore, effective contamination control coupled with adequate protocol has become essential in such production lines. The point of the protocol is minimization of damage caused by impurity metals diffused from these novel electronic materials [1-5].