Low-Temperature Elastic Softening due to Vacancies in Boron-Doped FZ Silicon Crystals
We confirm the following findings obtained in our previous experiment for the low-temperature elastic softening by the vacancies in boron-doped silicon crystals: (1) the steep softening that suddenly starts at 2-4 K in the cooling process, and (2) the complete disappearance of the softening by a weak magnetic field of 4 T applied along  direction. We further investigate in detail how the low-temperature softening at a fixed temperature responds to the applied magnetic field, to find the following characteristic anisotropy: The manner of disappearance of the softening strongly depends on the direction of the magnetic field. For the magnetic field imposed along [1-10] direction, nearly 60 % of the full softening still remains even at a strong magnetic field of 8 T, in contrast to the case of magnetic field applied along  direction.
M. Kittler and H. Richter
H. Yamada-Kaneta et al., "Low-Temperature Elastic Softening due to Vacancies in Boron-Doped FZ Silicon Crystals", Solid State Phenomena, Vols. 156-158, pp. 135-138, 2010