Low-Temperature Elastic Softening due to Vacancies in Boron-Doped FZ Silicon Crystals

Abstract:

We confirm the following findings obtained in our previous experiment for the low-temperature elastic softening by the vacancies in boron-doped silicon crystals: (1) the steep softening that suddenly starts at 2-4 K in the cooling process, and (2) the complete disappearance of the softening by a weak magnetic field of 4 T applied along [111] direction. We further investigate in detail how the low-temperature softening at a fixed temperature responds to the applied magnetic field, to find the following characteristic anisotropy: The manner of disappearance of the softening strongly depends on the direction of the magnetic field. For the magnetic field imposed along [1-10] direction, nearly 60 % of the full softening still remains even at a strong magnetic field of 8 T, in contrast to the case of magnetic field applied along [111] direction.

• Periodical: Solid State Phenomena (Volumes 156-158)
• Pages: 135-138
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.156-158.135
• Online since: October 2009
• Authors: Hiroshi Yamada-Kaneta, Hajime Watanabe, Yuta Nagai, Shotaro Baba, Mitsuhiro Akatsu, Yuichi Nemoto, Terutaka Goto
• Keywords: Boron, FZ, Low-Temperature, Magnetic Field, Silicon, Softening, Vacancy

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