Low-Temperature Elastic Softening due to Vacancies in Boron-Doped FZ Silicon Crystals

Abstract:

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We confirm the following findings obtained in our previous experiment for the low-temperature elastic softening by the vacancies in boron-doped silicon crystals: (1) the steep softening that suddenly starts at 2-4 K in the cooling process, and (2) the complete disappearance of the softening by a weak magnetic field of 4 T applied along [111] direction. We further investigate in detail how the low-temperature softening at a fixed temperature responds to the applied magnetic field, to find the following characteristic anisotropy: The manner of disappearance of the softening strongly depends on the direction of the magnetic field. For the magnetic field imposed along [1-10] direction, nearly 60 % of the full softening still remains even at a strong magnetic field of 8 T, in contrast to the case of magnetic field applied along [111] direction.

Info:

Periodical:

Solid State Phenomena (Volumes 156-158)

Edited by:

M. Kittler and H. Richter

Pages:

135-138

DOI:

10.4028/www.scientific.net/SSP.156-158.135

Citation:

H. Yamada-Kaneta et al., "Low-Temperature Elastic Softening due to Vacancies in Boron-Doped FZ Silicon Crystals", Solid State Phenomena, Vols. 156-158, pp. 135-138, 2010

Online since:

October 2009

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Price:

$35.00

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