DLTS Studies of Carbon Related Complexes in Irradiated N- and P-Silicon

L.F. Makarenko; F.P. Korshunov; Stanislav B. Lastovskii; L.I. Murin; Michael Moll

doi:10.4028/www.scientific.net/SSP.156-158.155

Paper Titles

Low-Temperature Elastic Softening due to Vacancies in Boron-Doped FZ Silicon Crystals
p.135

Vacancies and Self-Interstitials Dynamics in Silicon Wafers
p.139

Interaction of Point Defects with Impurities in the Si-SiO₂ System and its Influence on the Properties of the Interface
p.145

Anomalous Out-Diffusion Profiles of Nitrogen in Silicon
p.149

DLTS Studies of Carbon Related Complexes in Irradiated N- and P-Silicon
p.155

Copper In-Depth Distribution in Hydrogen Implanted Cz Si Wafers Subjected to Two-Step Annealing
p.161

Radiation Defects in Silicon: Effect of Contamination by Platinum Atoms
p.167

Review of Stress Effects on Dopant Solubility in Silicon and Silicon-Germanium Layers
p.173

Oxygen Diffusion in Si_1-xGe_x Alloys
p.181

HomeSolid State PhenomenaSolid State Phenomena Vols. 156-158DLTS Studies of Carbon Related Complexes in...

DLTS Studies of Carbon Related Complexes in Irradiated N- and P-Silicon

Abstract:

DLTS studies of transformation kinetics of different carbon–related complexes in electron irradiated n- and p-type silicon have been performed. It has been found that silicon self-interstitials have very low mobility even at room temperature in p-Si, but become extremely mobile under elec-tron injection. It is shown that upon annealing of interstitial carbon in p-Si a metastable state for interstitial carbon-interstitial oxygen complex is formed. This state has an energy level of about Еv+0.36 eV. The formation of the stable and metastable states takes place concurrently. The observed features of the carbon-related complexes formation are likely related to the existence of different crystallographic orientation of the equiprobable pathways through which the interstitial carbon and oxygen atoms can approach each other.

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Solid State Phenomena (Volumes 156-158)

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155-160

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https://doi.org/10.4028/www.scientific.net/SSP.156-158.155

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Online since:

October 2009

Authors:

L.F. Makarenko, F.P. Korshunov, Stanislav B. Lastovskii, L.I. Murin, Michael Moll

Keywords:

Defect Reaction, Radiation Defect Interstitial Carbon, Silicon

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