DLTS Studies of Carbon Related Complexes in Irradiated N- and P-Silicon
DLTS studies of transformation kinetics of different carbon–related complexes in electron irradiated n- and p-type silicon have been performed. It has been found that silicon self-interstitials have very low mobility even at room temperature in p-Si, but become extremely mobile under elec-tron injection. It is shown that upon annealing of interstitial carbon in p-Si a metastable state for interstitial carbon-interstitial oxygen complex is formed. This state has an energy level of about Еv+0.36 eV. The formation of the stable and metastable states takes place concurrently. The observed features of the carbon-related complexes formation are likely related to the existence of different crystallographic orientation of the equiprobable pathways through which the interstitial carbon and oxygen atoms can approach each other.
M. Kittler and H. Richter
L.F. Makarenko et al., "DLTS Studies of Carbon Related Complexes in Irradiated N- and P-Silicon ", Solid State Phenomena, Vols. 156-158, pp. 155-160, 2010