Interaction of Point Defects with Impurities in the Si-SiO2 System and its Influence on the Properties of the Interface

Daniel Kropman; E. Mellikov; K. Lott; Tiit Kärner; Ivo Heinmaa; Tony Laas; Arthur Medvid; Wolfgang Skorupa; S. Prucnal; S. Zvyagin; E. Cizmar; M. Ozerov; J. Woznitsa

doi:10.4028/www.scientific.net/SSP.156-158.145

Paper Titles

The Production of Vacancy-Oxygen Defects in Electron-Irradiated Cz-Si Initially Treated at High Temperatures and High Pressures
p.123

Divacancy-Oxygen and Trivacancy-Oxygen Complexes in Silicon: Local Vibrational Mode Studies
p.129

Low-Temperature Elastic Softening due to Vacancies in Boron-Doped FZ Silicon Crystals
p.135

Vacancies and Self-Interstitials Dynamics in Silicon Wafers
p.139

Interaction of Point Defects with Impurities in the Si-SiO₂ System and its Influence on the Properties of the Interface
p.145

Anomalous Out-Diffusion Profiles of Nitrogen in Silicon
p.149

DLTS Studies of Carbon Related Complexes in Irradiated N- and P-Silicon
p.155

Copper In-Depth Distribution in Hydrogen Implanted Cz Si Wafers Subjected to Two-Step Annealing
p.161

Radiation Defects in Silicon: Effect of Contamination by Platinum Atoms
p.167

HomeSolid State PhenomenaSolid State Phenomena Vols. 156-158Interaction of Point Defects with Impurities in...

Interaction of Point Defects with Impurities in the Si-SiO₂ System and its Influence on the Properties of the Interface

Abstract:

The results of investigation of the point defect generation and interaction with impurities in the Si-SiO2 system during the process of its formation by means of electron paramagnetic resonance (EPR) and nucleous magnetic resonance (NMR) technique are presented. It has been shown that the diference in point defects interaction with hydrogen at the Si-SO2 interface with n- and p-type conductivity are connected with the sign of hydrogen ions incorporation dependence on the Fermi level position in accordance with the proposed model. The interface properties may be improved by laser irradiation.