Radiation Defects in Silicon: Effect of Contamination by Platinum Atoms

Abstract:

The influence of platinum contamination on the stability of radiation defects produced by high-energy proton irradiation was investigated in the low-doped n-type float-zone oxygen rich silicon forming the base of power p+nn+ diodes. Platinum was first implanted and then in-diffused at different temperatures to obtain different levels of contamination. Diodes were then implanted with 1.8 MeV protons to a fluence of 2x1010 cm-2 and radiation defect reaction during isochronal annealing were investigated by deep-level transient spectroscopy. Results show that contamination of silicon by platinum atoms influences significantly both the introduction rates and the temperature stability of dominant radiation defects (vacancy-oxygen pairs, divacancies and VOH complexes).

• Periodical: Solid State Phenomena (Volumes 156-158)
• Pages: 167-172
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.156-158.167
• Online since: October 2009
• Authors: Pavel Hazdra, Volodymyr V. Komarnitskyy
• Keywords: Deep Level Transient Spectroscopy, Platinum, Radiation Defect, Silicon

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