Radiation Defects in Silicon: Effect of Contamination by Platinum Atoms
The influence of platinum contamination on the stability of radiation defects produced by high-energy proton irradiation was investigated in the low-doped n-type float-zone oxygen rich silicon forming the base of power p+nn+ diodes. Platinum was first implanted and then in-diffused at different temperatures to obtain different levels of contamination. Diodes were then implanted with 1.8 MeV protons to a fluence of 2x1010 cm-2 and radiation defect reaction during isochronal annealing were investigated by deep-level transient spectroscopy. Results show that contamination of silicon by platinum atoms influences significantly both the introduction rates and the temperature stability of dominant radiation defects (vacancy-oxygen pairs, divacancies and VOH complexes).
M. Kittler and H. Richter
P. Hazdra and V. V. Komarnitskyy, "Radiation Defects in Silicon: Effect of Contamination by Platinum Atoms", Solid State Phenomena, Vols. 156-158, pp. 167-172, 2010