Quantitative Iron Concentration Imaging

Martin C. Schubert; Holger Habenicht; Michael J. Kerler; Wilhelm Warta

doi:10.4028/www.scientific.net/SSP.156-158.407

Paper Titles

Iron Gettering in CZ Silicon during the Industrial Solar Cell Process
p.381

Study of Internal versus External Gettering of Iron during Slow Cooling Processes for Silicon Solar Cell Fabrication
p.387

Effect of Oxygen in Low Temperature Boron and Phosphorus Diffusion Gettering of Iron in Czochralski-Grown Silicon
p.395

Far-Action Defects Formation and Gettering in 6H-SiC Lely Crystals Irradiated by Bi
p.401

Quantitative Iron Concentration Imaging
p.407

EBIC Investigation of the Influence of Hydrogen Passivation on Thin-Film Polycrystalline Silicon Solar Cells Obtained by Aluminium Induced Crystallization and Epitaxy
p.413

Characterization of Thin Film Photovoltaic Material Using Photoluminescence and Raman Spectroscopy
p.419

Comparative Study of Electrical and Optical Properties of Plastically Deformed Silicon
p.425

Spatially Resolved Defect Analysis in Cz-Silicon after Copper-Nickel Co-Precipitation by Virtue of Light-Beam-Induced Current Measurements
p.431

HomeSolid State PhenomenaSolid State Phenomena Vols. 156-158Quantitative Iron Concentration Imaging

Quantitative Iron Concentration Imaging

Abstract:

Iron concentration imaging has been proven to be a very valuable analysis technique for silicon material characterization. We applied this method to determine the influence of a low temperature annealing after surface passivation on the interstitial iron concentration. The influence of hydrogen passivation induced by silicon nitride passivation is estimated by comparison of silicon nitride and aluminum oxide passivation. The second part of this work deals with systematic errors inherent to the iron concentration technique. Simulations show under which conditions errors occur due to the non-uniformity of carrier profiles.