Characterization of Thin Film Photovoltaic Material Using Photoluminescence and Raman Spectroscopy

Abstract:

Electrical and structural properties of thin-film photovoltaic (PV) material fabricated using Crystal Silicon on Glass (CSG) technology was investigated applying photoluminescence (PL) and Raman spectroscopy (RS). The obtained results and their correlation with the PV properties of the cells prepared from the same material showed that PL is applicable for in-line characterization of the material before the electrical contact fabrication processes. The results obtained using RS gave useful information on crystallization grade of the material during the fabrication process.

• Periodical: Solid State Phenomena (Volumes 156-158)
• Pages: 419-424
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.156-158.419
• Online since: October 2009
• Authors: Teimuraz Mchedlidze, Tzanimir Arguirov, Simona Kouteva-Arguirova, Martin Kittler
• Keywords: Dislocation Related Luminescence, Photovoltaic Material Characterization, Stark Effect on Dislocation in Silicon, Thin Film Photovoltaic Material

References

[1] A. Feltrin and A. Freundlich, Renewable Energy, Vol. 33 (2008), p.180.

[2] L. L. Kazmerski, J. Electron Spectrosc. Relat. Phenom., Vol. 150 (2006), p.105.

[3] M. A. Green, P. A. Basore, N. Chang, D. Clugston, R. Egan, R. Evans, D. Hogg, S. Jarnason, M. Keevers, P. Lasswell, J. O'Sullivan, U. Schubert, A. Turner, S. R. Wenham, T. Young, Solar energy Vol. 77 (2004), p.857.

DOI: 10.1016/j.solener.2004.06.023

[4] A. Matsuda, Jpn. J. Appl. Phys., Part 1, Vol. 43 (2004), p.7909.

[5] W. Beyer, J. Hupkes, and H. Stiebig, Thin Solid Films, Vol. 516 (2007), p.147.

[6] T. Mchedlidze, T. Arguirov, M. Holla, and M. Kittler, J. Appl. Phys., Vol. 1050(2009), 093107.

[7] P. A. Basore, Proc. 21st Eur. PVSEC, Dresden, (2006), p.544.

[8] O. Breitenstein, R. Gupta, and J. Schneider, J. Appl. Phys., Vol. 102 (2007), 024511.

[9] T. Hoang, J. Holleman, P. LeMinh, J. Schmitz, T. Mchedlidze, T. Arguirov, and M. Kittler, IEEE trans. on Electron Devices, Vol. 54 (2007), p.1860.

DOI: 10.1109/ted.2007.901072

[10] T. Mchedlidze, T. Arguirov, M. Kittler, T. Hoang, J. Holleman, and J. Schmitz, Appl. Phys. Lett., Vol. 91 (2007), 201113.

DOI: 10.1063/1.2813024

[11] T. Mchedlidze, T. Arguirov, S. Kouteva-Arguirova, G. Jia, M. Kittler, R. Rölver, B. Berghoff, M. Först, D.L. Bätzner, B. Spangenberg, Thin Solid films, Vol. 516 (2008) p.6800.

DOI: 10.1016/j.tsf.2007.12.083

[12] Ch. Ossadnik, S. Vepřek, and I. Gregora, Thin Solid films, Vol. 337 (1999) p.148.

DOI: 10.1016/s0040-6090(98)01175-4

[13] V. Kveder, M. Badylevich, W. Schröter, M. Seibt, E. Steinman, and A. Izotov, Phys. Stat. Sol. (a), Vol. 202 (2005), p.901.

DOI: 10.1002/pssa.200460512

[14] X. Yu, O. Vyvenko, M. Kittler, W. Seifert, T. Mchedlidze, T. Arguirov, and M. Reiche, Semiconductors, Vol 41 (2007), p.458.

DOI: 10.1134/s1063782607040197

[15] S. M. Sze, Physics of Semiconductor Devices, John Wiley & Sons, New York (1981), p.713.

[16] R. R. King, C. M. Fetzer, P. C. Colter, K. M. Edmondson, J. H. Ermer, H. L. Cotal, H. Yoon, A. P. Stavrides, G. Kinsey, D. D. Krut, N. H. Karam, Proc. 29th IEEE Photovoltaic Specialists Conf., New Orleans, Louisiana, May 19-24, 2002, p.776.

DOI: 10.1109/pvsc.2002.1190685