Characterization of Thin Film Photovoltaic Material Using Photoluminescence and Raman Spectroscopy

Abstract:

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Electrical and structural properties of thin-film photovoltaic (PV) material fabricated using Crystal Silicon on Glass (CSG) technology was investigated applying photoluminescence (PL) and Raman spectroscopy (RS). The obtained results and their correlation with the PV properties of the cells prepared from the same material showed that PL is applicable for in-line characterization of the material before the electrical contact fabrication processes. The results obtained using RS gave useful information on crystallization grade of the material during the fabrication process.

Info:

Periodical:

Solid State Phenomena (Volumes 156-158)

Edited by:

M. Kittler and H. Richter

Pages:

419-424

DOI:

10.4028/www.scientific.net/SSP.156-158.419

Citation:

T. Mchedlidze et al., "Characterization of Thin Film Photovoltaic Material Using Photoluminescence and Raman Spectroscopy", Solid State Phenomena, Vols. 156-158, pp. 419-424, 2010

Online since:

October 2009

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Price:

$35.00

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