Spatially Resolved Defect Analysis in Cz-Silicon after Copper-Nickel Co-Precipitation by Virtue of Light-Beam-Induced Current Measurements

Abstract:

We report on a light-beam-induced current (LBIC)-analysis of metal silicide defects arising from co-precipitation of copper and nickel in Cz-silicon-bicrystals produced by wafer direct bonding. Large colonies of silicide precipitates in the one wafer emerging from undisturbed growth from few nucleation sites were observed in different orientations with respect to the surface which correspond to Si {110} planes. From this, the colonies formed during copper-nickel co-precipitation reveal the same attributes as those colonies typical for copper precipitation in the absence of nickel. Oxygen related defects associated with a higher defect distribution in the other wafer were characterized by means of high resolution Transmission Electron Microscopy (TEM) and their temperature dependent LBIC signal.

• Periodical: Solid State Phenomena (Volumes 156-158)
• Pages: 431-436
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.156-158.431
• Online since: October 2009
• Authors: P. Saring, C. Rudolf, L. Stolze, A. Falkenberg, Michael Seibt
• Keywords: Extended Defect, LBIC, Metal Impurity, Metal Silicide Precipitate, Recombination Activity, Silicon

References

[1] E. R. Weber, Appl. Phys. A 30 (1983) 1-22.

[2] A. G. Cullis, L. E. Katz, Phil. Mag. 30 (1974) 1419-1443.

[3] P. D. Augustus, Inst. Phys. Conf. Ser. No. 67 (1983) 229-234.

[4] K. Honda, A. Ohsawa, N. Toyokura, Appl. Phys. Lett. 45 (1984) 270-271.

[5] K. Honda, A. Ohsawa, N. Toyokura, Appl. Phys. Lett. 46 (1985) 582-584.

[6] W. Schröter, M. Seibt, D. Gilles: High Temperature Properties of Transition Elements in Silicon, in: Handbook of Semiconductors Vol. 1, ed. K. A. Jackson, W. Schröter, Wiley-VCH 2000, p.597.

DOI: 10.1002/9783527603978.mst0251

[7] A.A. Istratov, H. Hedemann, M. Seibt, O.F. Vyvenko, W. Schröter, T. Heiser, C. Flink, H. Hieslmair, E.R. Weber, J. Electrochem. Soc. 145 (1998) 3889-3898.

DOI: 10.1149/1.1838889

[8] F. Riedel, W. Schröter, Phys. Rev. B. 62 (2000) 7150-7156.

[9] M. Kittler, W. Seifert, Scanning Microscopy, 6 (1992) 979-991.

[10] P. S. Plekhanov, T. Y. Tan, Appl. Phys. Lett. 76 (2000) 3777-3779.

[11] W. Schröter, M. Seibt, D. Gilles: High Temperature Properties of Transition Elements in Silicon, in: Handbook of Semiconductors Vol. 1, ed. K. A. Jackson, W. Schröter, Wiley-VCH 2000, p.597.

DOI: 10.1002/9783527603978.mst0251

[12] E. Nes, J. Washburn, J. Appl. Phys. 42 (1971) 3562-3574.

[13] M. Seibt, M. Griess, A. A. Istratov, H. Hedemann, A. Sattler, W. Schröter, phys. stat. sol. (a), 166 (1998) 171-182.

DOI: 10.1002/(sici)1521-396x(199803)166:1<171::aid-pssa171>3.0.co;2-2

[14] T. Buonassisi, M. Heuer, A. A. Istratov, M. D. Pickett, M. A. Marcus, B. Lai, Z. Cai, S. M. Heald, E. R. Weber, Acta Materialia 55 (2007) 6119-6126.

DOI: 10.1016/j.actamat.2007.07.030

[15] A.A. Istratov, T. Buonassisi, R.J. McDonald, A.R. Smith, R. Schindler, J.A. Rand, J.P. Kalejs, E.R. Weber, J. Appl. Phys. 94 (2003) 6552-6559.

DOI: 10.1063/1.1618912

[16] P. Saring, C. Rudolf, L. Stolze, M. Seibt, Mat. Sci. Eng: B 159/160 (2009) 216-218.

[17] C. Donolato, J. Appl. Phys. 54 (1983) 1314-1322.

[18] M. Seibt,D. Abdelbarey,V. Kveder,C. Rudolf,P. Saring,L. Stolze,O. Voss, phys. stat. sol., in press.

[19] C. Rudolf, P. Saring, L. Stolze, M. Seibt, Mat. Sci. Eng: B 159/160 (2009) 365-368.

[10] W. Seifert, M. Kittler und J. Vanhellemont, Mat. Sci. Engin. B 42 (1996)260-264.

[21] V. Kveder, M. Kittler und W. Schröter, Phys. Rev. B 63, 115208 (2001).

[22] G. Kissinger, G. Morgenstern und H. Richter, J. Appl. Phys. 74 (1993) 6576-6589.

[23] L. Stolze, P. Saring, C. Rudolf, M. Seibt, phys. stat. sol., in press.