An Express Method for the Study of Planar Homogeneity of Diffusion Lenght in Multicrystalline Solar Silicon

V.G. Litovchenko; Andrey SARIKOV; A.A. Evtukh

doi:10.4028/www.scientific.net/SSP.156-158.449

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HomeSolid State PhenomenaSolid State Phenomena Vols. 156-158An Express Method for the Study of Planar...

An Express Method for the Study of Planar Homogeneity of Diffusion Lenght in Multicrystalline Solar Silicon

Abstract:

In this paper, the influence of the gettering treatment on the distribution of diffusion length of minority charge carriers in multicrystalline silicon has been investigated. For the calculation of the parameters of diffusion length distribution, a new method has been proposed based on the mathematical treatment of experimentally measured integrated spectra of surface photovoltage measured by capacitor method (capacitor photovoltage). Obtained results show not only the increase of the average diffusion length as a result of used gettering procedure, but also the decrease of inhomogeneity of its distribution.

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Periodical:

Solid State Phenomena (Volumes 156-158)

Pages:

449-453

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.156-158.449

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Online since:

October 2009

Authors:

V.G. Litovchenko, Andrey SARIKOV, A.A. Evtukh

Keywords:

Diffusion Length, Gettering, Multicrystalline Silicon

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References

[1] V. G. Litovchenko, A. A. Efremov, A. A. Evtukh et al.: Semicond. Phys., Quant. Electronics & Optoelectronics, Vol. 4 (2001), p.82.

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[2] V. G. Litovchenko, N. I. Klyui, Solar Energy Mater. & Solar Cells : Vol. 68 (2001), p.55.

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[3] Standard Test Methods for Minority Carrier Diffusion Length in Extrinsic Semiconductors by Measurements of Steady-State Surface Photovoltage. ASTM Designation: F391-96, published: April 1996 /Annual Book of ASTM Standards, v. 10. 05 (Electronics II), 150.

DOI: 10.1520/f0391

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