An Express Method for the Study of Planar Homogeneity of Diffusion Lenght in Multicrystalline Solar Silicon

Abstract:

Article Preview

In this paper, the influence of the gettering treatment on the distribution of diffusion length of minority charge carriers in multicrystalline silicon has been investigated. For the calculation of the parameters of diffusion length distribution, a new method has been proposed based on the mathematical treatment of experimentally measured integrated spectra of surface photovoltage measured by capacitor method (capacitor photovoltage). Obtained results show not only the increase of the average diffusion length as a result of used gettering procedure, but also the decrease of inhomogeneity of its distribution.

Info:

Periodical:

Solid State Phenomena (Volumes 156-158)

Edited by:

M. Kittler and H. Richter

Pages:

449-453

DOI:

10.4028/www.scientific.net/SSP.156-158.449

Citation:

V.G. Litovchenko et al., "An Express Method for the Study of Planar Homogeneity of Diffusion Lenght in Multicrystalline Solar Silicon", Solid State Phenomena, Vols. 156-158, pp. 449-453, 2010

Online since:

October 2009

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.