Electron-Beam-Induced Current Study of Breakdown Behavior of High-K Gate MOSFETs

Abstract:

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We report a dynamic and microscopic investigation of electrical stress induced defects in metal-oxide-semiconductor (MOS) devices with high-k gate dielectric by using electron-beam induced current (EBIC) technique. The correlation between time-dependent dielectric breakdown (TDDB) characteristics and EBIC imaging of breakdown sites are found. A systematic study was performed on pre-existing and electrical stress induced defects. Stress-induced defects are related to the formation of electron trapping defects. The origin of pre-existing defects is also discussed in terms of oxygen vacancy model with comparing different gate electrodes.

Info:

Periodical:

Solid State Phenomena (Volumes 156-158)

Edited by:

M. Kittler and H. Richter

Pages:

461-466

DOI:

10.4028/www.scientific.net/SSP.156-158.461

Citation:

J. Chen et al., "Electron-Beam-Induced Current Study of Breakdown Behavior of High-K Gate MOSFETs", Solid State Phenomena, Vols. 156-158, pp. 461-466, 2010

Online since:

October 2009

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Price:

$35.00

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