Electron-Beam-Induced Current Study of Breakdown Behavior of High-K Gate MOSFETs

Jun Chen; Takashi Sekiguchi; Masami Takase; Naoki Fukata; Ryu Hasunuma; Kikuo Yamabe; Motoyuki Sato; Keisaku Yamada; Toyohiro Chikyo

doi:10.4028/www.scientific.net/SSP.156-158.461

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Electron-Beam-Induced Current Study of Breakdown Behavior of High-K Gate MOSFETs

Abstract:

We report a dynamic and microscopic investigation of electrical stress induced defects in metal-oxide-semiconductor (MOS) devices with high-k gate dielectric by using electron-beam induced current (EBIC) technique. The correlation between time-dependent dielectric breakdown (TDDB) characteristics and EBIC imaging of breakdown sites are found. A systematic study was performed on pre-existing and electrical stress induced defects. Stress-induced defects are related to the formation of electron trapping defects. The origin of pre-existing defects is also discussed in terms of oxygen vacancy model with comparing different gate electrodes.

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Periodical:

Solid State Phenomena (Volumes 156-158)

Pages:

461-466

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.156-158.461

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Online since:

October 2009

Authors:

Jun Chen, Takashi Sekiguchi, Masami Takase, Naoki Fukata, Ryu Hasunuma, Kikuo Yamabe, Motoyuki Sato, Keisaku Yamada, Toyohiro Chikyo

Keywords:

EBIC, High-k Gate Dielectric

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