In Situ Observation of Oxygen Precipitation in Silicon with High Energy X-Rays

Abstract:

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Oxygen precipitation in silicon has been studied in-situ by high energy X-ray diffraction. A gain of diffracted intensity is expected if an ideal crystal is distorted by growing precipitates as the diffraction mode changes from a dynamical to a more kinematical one. Irreversible changes in the intensity of a 220 and a 400 Bragg peak are detected for Czochralski grown samples only, but not in a float zone grown reference crystal. Thus, these changes are attributed to oxygen precipitation, which is confirmed by a subsequent classical ex-situ characterization. Further, the changes of the intensities of the two measured Bragg peaks are compared to each other to get the level of change in the diffraction mode from a dynamical to a kinematical one. The detection limit of the specific setup is estimated via a simulation of the defect inventory to correspond to a precipitate diameter of 50nm with the density of 6.9•109 1/cm3. The diffraction experiments are done with polychromatic and divergent X-rays generated by a laboratory source, albeit with high energy. This results in a simple and accessible setup for the characterization of oxygen precipitates.

Info:

Periodical:

Solid State Phenomena (Volumes 156-158)

Edited by:

M. Kittler and H. Richter

Pages:

437-441

DOI:

10.4028/www.scientific.net/SSP.156-158.437

Citation:

H. Grillenberger and A. Magerl, "In Situ Observation of Oxygen Precipitation in Silicon with High Energy X-Rays", Solid State Phenomena, Vols. 156-158, pp. 437-441, 2010

Online since:

October 2009

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Price:

$35.00

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