Delineation of Microdefects in Silicon Substrates by Chromium-Free Preferential Etching Solutions and Laser Scattering Tomography

Abstract:

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Chromium-free preferential etching techniques in combination with light optical microscopy were compared with the non-destructive Laser Scattering Tomography (LST) for the evaluation of crystal defect densities in Czochralski substrates grown under different conditions. Dichromate containing etching solutions (original Secco etch and dilute Secco etch) were included into the study as reference. The chromium-free etching solutions with high etch rates comprised mixtures of nitric, hydrofluoric and acetic acid with water (JEITA 1, MEMC). Those with low etch rates consisted of mixtures of nitric and acetic or propanoic acid with hydrogen peroxide which form peracetic or perpropanoic acid (Organic Peracid Etches). OPE solutions provide improved discrimination of different types of defects and work also on highly doped substrates. As a general result, it turned out that the defect densities determined by the preferential etching solutions applied were significantly higher than those evaluated by LST. Relatively close to the LST defect densities are those determined by original Secco etch for larger etch pits.

Info:

Periodical:

Solid State Phenomena (Volumes 156-158)

Edited by:

M. Kittler and H. Richter

Pages:

443-448

DOI:

10.4028/www.scientific.net/SSP.156-158.443

Citation:

M. Pellowska et al., "Delineation of Microdefects in Silicon Substrates by Chromium-Free Preferential Etching Solutions and Laser Scattering Tomography", Solid State Phenomena, Vols. 156-158, pp. 443-448, 2010

Online since:

October 2009

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$35.00

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