Study of Internal versus External Gettering of Iron during Slow Cooling Processes for Silicon Solar Cell Fabrication

Abstract:

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The e ect of slow cooling after di erent high temperature treatments on the in- terstitial iron concentration and on the electron lifetime of p-type mc-Si wafers has been in- vestigated. The respective impacts of internal relaxation gettering and external segregation gettering of metal impurities during an extended phosphorous di usion gettering are studied. It is shown that the enhanced reduction of interstitial Fe during extended P-gettering is due to an enhanced segregation gettering while faster impurities like Cu and Ni are possibly reduced due to an internal gettering e ect.

Info:

Periodical:

Solid State Phenomena (Volumes 156-158)

Edited by:

M. Kittler and H. Richter

Pages:

387-393

DOI:

10.4028/www.scientific.net/SSP.156-158.387

Citation:

J. Hofstetter et al., "Study of Internal versus External Gettering of Iron during Slow Cooling Processes for Silicon Solar Cell Fabrication", Solid State Phenomena, Vols. 156-158, pp. 387-393, 2010

Online since:

October 2009

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Price:

$35.00

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