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HomeSolid State PhenomenaSolid State Phenomena Vols. 156-158Study of Internal versus External Gettering of...

Study of Internal versus External Gettering of Iron during Slow Cooling Processes for Silicon Solar Cell Fabrication

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Abstract:

The eect of slow cooling after dierent high temperature treatments on the in- terstitial iron concentration and on the electron lifetime of p-type mc-Si wafers has been in- vestigated. The respective impacts of internal relaxation gettering and external segregation gettering of metal impurities during an extended phosphorous diusion gettering are studied. It is shown that the enhanced reduction of interstitial Fe during extended P-gettering is due to an enhanced segregation gettering while faster impurities like Cu and Ni are possibly reduced due to an internal gettering eect.

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Periodical:

Solid State Phenomena (Volumes 156-158)

Pages:

387-393

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.156-158.387

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Online since:

October 2009

Authors:

Jasmin Hofstetter, Jean F. Lelièvre, Carlos del Cañizo, Antonio Luque

Keywords:

Multicrystalline Silicon, Phosphorus Diffusion Gettering, Slow Cooling

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© 2010 Trans Tech Publications Ltd. All Rights Reserved

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[1] J. Hofstetter, J. F. Leli`evre, C. del Ca˜nizo, and A. Luque: Materials Science and Engineering: B, vol. 159-160 (2009), pp.299-304.

[2] T. Buonassisi, A. Istratov, M. Marcus, S. Peters, C. Ballif, M. Heuer, T. Ciszek, Z. Cai, B. Lai, R. Schindler, and E. Weber: in Proc. 31st IEEE PVSC, Lake Buena Vista, Florida (2005), pp.1027-1030.

DOI: 10.1109/pvsc.2005.1488308

[3] P. Manshanden and L. Geerligs: Sol. Energy Mater. Sol. Cells, vol. 90 (2006), pp.998-1012.

[4] D. Schwaderer, S. Riepe, H. Habenicht, O. Schultz, and W. Warta: in Proc. 22nd EUPVSEC, Milan, Italy (2007).

[5] J. Tan, A. Cuevas, D. Macdonald, N. Bennett, I. Romijn, T. Trupke, and R. Bardos, in Proc. 22nd EUPVSEC, Milan, Italy (2007), pp.1309-1313.

[6] M. Rinio, A. Yodyunyong, M. Pirker, S. Keipert, P. Wang, T. Buonassisi, and D. Borchert, in Proc. 23nd EUPVSEC, Valencia, Spain (2008).

[7] D. H. Macdonald, L. J. Geerligs, , and A. Azzizi: J. Appl. Phys., vol. 95, no. 3 (2004) pp.1021-1028.

[8] S. Ponce-Alc´antara, C. del Ca˜nizo, and A. Luque: Solar Energy Materials & Solar Cells, vol. 87 (2005), pp.411-421.

DOI: 10.1016/j.solmat.2004.08.015

[9] S. K. Gandhi, VLSI Fabrication Principles. John Wiley & Son (1983).

[10] F. Ham: J. Phys. Chem. Solids, vol. 6 (1958), p.335.

[11] K. Graff, Metal impurities in silicon device fabrication, 1st ed. Springer-Verlag (1995).

[12] T. Buonassisi, A. Istratov, M. Marcus, B. Lai, Z. Cai, S. Heald, and E. Weber, Nat. Mater., vol. 4 (2005), pp.676-679.

DOI: 10.1038/nmat1457

[13] J. R. Davis, A. Rohatgi, R. H. Hopkins, P. D. Blais, T. Rai-Choudhury, J. R. McCormick, and H. C. Mollenkopf, IEEE T. Electron. Dev., vol. 27 (1980), pp.677-687.

DOI: 10.1109/t-ed.1980.19922

[14] M. B. Shabani, T. Yamashita, and E. Morita, Solid state phenomena, vol. 131-133 (2008), pp.399-404.