Paper Titles

Suppression of Pores Formation on a Surface of p-Si by Laser Radiation
p.337

Hydrogenation in Crystalline Silicon Materials for Photovoltaic Application
p.343

Hydrogen-Induced Passivation of Grain-Boundary Defects in Polycrystalline Silicon
p.351

Bulk Passivation of Defects in Multi-Crystalline Silicon Solar Cells by a-SiN_x:H Layers
p.357

Passivation of Si Surfaces Investigated by In Situ Photoluminescence Techniques
p.363

Gettering Efficiency of Si (110)/(100) Directly Bonded Hybrid Crystal Orientation Substrates
p.369

Trans-R_P Gettering and Out-Diffusion of Oxygen Implanted into Highly B-Doped Silicon
p.375

Iron Gettering in CZ Silicon during the Industrial Solar Cell Process
p.381

Study of Internal versus External Gettering of Iron during Slow Cooling Processes for Silicon Solar Cell Fabrication
p.387

HomeSolid State PhenomenaSolid State Phenomena Vols. 156-158Passivation of Si Surfaces Investigated by In Situ...

Passivation of Si Surfaces Investigated by In Situ Photoluminescence Techniques

Article Preview

Abstract:

We investigated Si surfaces modified by wet-chemical and electrochemical treatments using pulsed photoluminescence (PL) and infrared spectroscopic ellipsometry during and after processing, both also in surface mapping techniques. Etching of oxidized Si surfaces by HF containing solutions lead to an enhancement in PL due to hydrogenation of the surface what improves the surface passivation and reduces the recombination loss of charge carriers via surface/interface states. PL measurements show that the H-terminated surface is attacked soon by HF or H2O species increasing again the recombination loss. Hence, a narrow time window for this type of processing exists. Nitrogen purging or exchanging the etching solution by a non-etching solution under negative bias decelerated the defect formation in HF solutions. Grafting of organic molecules (exchanging the H-Si by a C-Si bond) induces only small amounts of defects at the interface but stabilizes PL on a high level (i.e. surface recombination is low) for much longer times than for H-terminated Si surfaces.

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology XIII

Info:

Periodical:

Solid State Phenomena (Volumes 156-158)

Pages:

363-368

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.156-158.363

Citation:

Cite this paper

Online since:

October 2009

Authors:

J. Rappich, X. Zhang, D.M. Rosu, U. Schade, K. Hinrichs

Keywords:

Electrochemistry, Hydrogen Termination, In Situ, Mapping, Organic Molecules, Oxide Etching, Photoluminescence (PL)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2010 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] W. Kern, Semiconductor International 94 (1984) p.

[2] W. Kern, J. Electrochem. Soc. 137 (1990) p: 1887.

[3] J. Ruzyllo, A.M. Hoff, D.C. Frystak, S.D. Hossain, J. Electrochem. Soc. 136 (1989) p: 1474.

[4] T. Takahagi, I. Nagai, A. Ishitari, H. Kuroda, Y. Nagasawa, J. Appl. Phys. 64 (1988) p: 3516.

[5] J. Falta, D. Bahr, G. Materlik, B.H. Muller, M. Horn von Hoegen, Appl. Phys. Lett. 68 (1996) p: 1394.

DOI: 10.1063/1.116091

[6] W.M. Chen, I.A. Buyanova, A. Henry, W.X. Ni, G.V. Hansson, B. Monemar, Appl. Phys. Lett. 68 (1996) p: 1256.

[7] T. Fujino, T. Fuse, J. -T. Ryu, K. Inudzuka, T. Nakano, K. Goto, Y. Yamazaki, M. Katayama, K. Oura, Thin Solid Films 369 (2000) p: 25.

DOI: 10.1016/s0040-6090(00)00828-2

[8] G. Hollinger, S.J. Sferco, M. Lannoo, Phys. Rev. B 37 (1988) p: 7149.

[9] D.J. DiMaria, J.H. Stathis, Appl. Phys. Lett. 70 (1997) p: 2708.

[10] N. Watanabe, Y. Teramoto, A. Omura, H. Nohira, T. Hattori, Appl. Surf. Sci. 166 (2000) p: 460.

[11] Y.J. Chabal, Phys. Rev. Lett. 50 (1983) p: 1850.

[12] K. Itaya, R. Suguwara, Y. Morita, H. Tokumoto, Appl. Phys. Lett. 60 (1992) p: 2534.

[13] G.S. Higashi, Y.J. Chabal, G.W. Trucks, K. Raghavachari, App. Phys. Lett. 56 (1990) p: 656.

[14] P. Jakob, Y. Chabal, J. Chem. Phys. 95 (1991) p: 2897.

[15] P. Hartig, J. Rappich, T. Dittrich, Appl. Phys. Lett. 80 (2002) p: 67.

[16] J. Rappich, P. Hartig, N.H. Nickel, I. Sieber, S. Schulze, T. Dittrich, Microelectron. Eng. 80 (2005) p: 62.

[17] J. Rappich, V.Y. Timoshenko, T. Dittrich, J. Electrochem. Soc. 144 (1997) p: 493.

[18] V.Y. Timoshenko, A.B. Petrenko, M.N. Stolyarov, T. Dittrich, W. Fuessel, J. Rappich, J. Appl. Phys. 85 (1999) p: 4171.

[19] F. Yang, K. Roodenko, K. Hinrichs, J. Rappich, J. Micromech. Microeng. 17 (2007) p: S56.

[20] K. Hinrichs, M. Gensch, A. Röseler, N. Esser, J. Phys: Cond. Matter 16 (2004) p: 4335.

[21] K. Hinrichs, M. Gensch, N. Esser, Appl. Spec. 59 (2005) p: 272A.

[22] K. Hinrichs, K. Roodenko, J. Rappich, Electrochem. Commun. (2008) p: 315.

[23] U. Schade, A. Röseler, E.H. Korte, F. Bartl, K.P. Hofmann, T. Noll, W.B. Peatman, Rev. Sci. Instr. 73 (2002) p: 1568.

DOI: 10.1063/1.1423781

[24] M. Gensch, K. Hinrichs, A. Röseler, E.H. Korte, U. Schade, Anal. Bioanal. Chem. 376 (2003) p: 626.

[25] K. Hinrichs, M. Gensch, A. Röseler, E.H. Korte, K. Sahre, K.J. Eichhorn, N. Esser, U. Schade, Appl. Spectrosc. 57 (2003) p: 1250.

DOI: 10.1366/000370203769699117

[26] V.Y. Timoshenko, A.B. Petrenko, M.N. Stolyarov, T. Dittrich, W. Fuessel, J. Rappich, J. Appl. Phys. 85 (1999) p: 4171.

[27] J. Rappich, T. Dittrich, Y. Timoshenko, I. Beckers, W. Fuhs, Mat. Res. Soc. Symp. Proc. 452 (1997) p: 797.

[28] P. Allongue, C.H. d. Villeneuve, J. Pinson, F. Ozanam, J.N. Chazalviel, X. Wallart, Electrochim. Acta 43 (1998) p: 2791.

DOI: 10.1016/s0013-4686(98)00020-6

[29] A. Fidélis, F. Ozanam, J. -N. Chazalviel, Surf. Sci. 444 (2000) p: L7.

[30] W. Royea, A. Juang, N. Lewis, Applied Physics Letters 77 (2000) p: (1988).

[31] J. Rappich, A. Merson, K. Roodenko, T. Dittrich, M. Gensch, K. Hinrichs, Y. Shapira, Journal of Physical Chemistry B 110 (2006) p: 1332.

DOI: 10.1021/jp0545344