Bulk Passivation of Defects in Multi-Crystalline Silicon Solar Cells by a-SiNx:H Layers

Abstract:

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In this work the impact of hydrogenation from hydrogen-rich amorphous silicon nitride (a-SiNx:H) on dislocations and grain boundaries in multi-crystalline silicon (mc-Si) solar cells is presented. Layers are deposited by means of plasma enhanced chemical vapor deposition (PECVD). Electrical bulk passivation is provided during thermal annealing, in which hydrogen diffuses from a-SiNx:H. The passivation effect is discussed in terms of recombination centers and non-recombinative charge traps reduction as well as in terms of local short circuit current improvement in specially manufactured solar cells.

Info:

Periodical:

Solid State Phenomena (Volumes 156-158)

Edited by:

M. Kittler and H. Richter

Pages:

357-362

DOI:

10.4028/www.scientific.net/SSP.156-158.357

Citation:

E. Cornagliotti et al., "Bulk Passivation of Defects in Multi-Crystalline Silicon Solar Cells by a-SiNx:H Layers", Solid State Phenomena, Vols. 156-158, pp. 357-362, 2010

Online since:

October 2009

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Price:

$35.00

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