Bulk Passivation of Defects in Multi-Crystalline Silicon Solar Cells by a-SiNx:H Layers
In this work the impact of hydrogenation from hydrogen-rich amorphous silicon nitride (a-SiNx:H) on dislocations and grain boundaries in multi-crystalline silicon (mc-Si) solar cells is presented. Layers are deposited by means of plasma enhanced chemical vapor deposition (PECVD). Electrical bulk passivation is provided during thermal annealing, in which hydrogen diffuses from a-SiNx:H. The passivation effect is discussed in terms of recombination centers and non-recombinative charge traps reduction as well as in terms of local short circuit current improvement in specially manufactured solar cells.
M. Kittler and H. Richter
E. Cornagliotti et al., "Bulk Passivation of Defects in Multi-Crystalline Silicon Solar Cells by a-SiNx:H Layers", Solid State Phenomena, Vols. 156-158, pp. 357-362, 2010