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HomeSolid State PhenomenaSolid State Phenomena Vols. 156-158Bulk Passivation of Defects in Multi-Crystalline...

Bulk Passivation of Defects in Multi-Crystalline Silicon Solar Cells by a-SiN_x:H Layers

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Abstract:

In this work the impact of hydrogenation from hydrogen-rich amorphous silicon nitride (a-SiNx:H) on dislocations and grain boundaries in multi-crystalline silicon (mc-Si) solar cells is presented. Layers are deposited by means of plasma enhanced chemical vapor deposition (PECVD). Electrical bulk passivation is provided during thermal annealing, in which hydrogen diffuses from a-SiNx:H. The passivation effect is discussed in terms of recombination centers and non-recombinative charge traps reduction as well as in terms of local short circuit current improvement in specially manufactured solar cells.

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Periodical:

Solid State Phenomena (Volumes 156-158)

Pages:

357-362

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.156-158.357

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Online since:

October 2009

Authors:

Emanuele Cornagliotti, Harold F.W. Dekkers, Caterina Prastani, Joachim John, Emmanuel Van Kerschaver, Jef Poortmans, Robert P. Mertens

Keywords:

Charge Trapping, Hydrogenation, mc-Si

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© 2010 Trans Tech Publications Ltd. All Rights Reserved

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