Gettering Efficiency of Si (110)/(100) Directly Bonded Hybrid Crystal Orientation Substrates

Tatsuhiko Aoki; Hiroaki Kariyazaki; Koji Sueoka; Kouji Izunome

doi:10.4028/www.scientific.net/SSP.156-158.369

Paper Titles

Hydrogenation in Crystalline Silicon Materials for Photovoltaic Application
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Hydrogen-Induced Passivation of Grain-Boundary Defects in Polycrystalline Silicon
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Bulk Passivation of Defects in Multi-Crystalline Silicon Solar Cells by a-SiN_x:H Layers
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Passivation of Si Surfaces Investigated by In Situ Photoluminescence Techniques
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Gettering Efficiency of Si (110)/(100) Directly Bonded Hybrid Crystal Orientation Substrates
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Trans-R_P Gettering and Out-Diffusion of Oxygen Implanted into Highly B-Doped Silicon
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Iron Gettering in CZ Silicon during the Industrial Solar Cell Process
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Study of Internal versus External Gettering of Iron during Slow Cooling Processes for Silicon Solar Cell Fabrication
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Effect of Oxygen in Low Temperature Boron and Phosphorus Diffusion Gettering of Iron in Czochralski-Grown Silicon
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Gettering Efficiency of Si (110)/(100) Directly Bonded Hybrid Crystal Orientation Substrates

Abstract:

We have investigated the gettering efficiency at the interface of Si (110) and Si (100) directly bonded (DSB) substrates. DSB substrates were prepared by conventional bonding and grinding back methods. DSB substrates were intentionally contaminated with 3d transition metals (Fe, Ni, Cu) and then annealed at 1000 oC. The dependence of metal concentrations on the depth was evaluated by a secondary ionization mass spectrometer (SIMS). Furthermore, we observed the interface of DSB by transmission electron microscope (TEM), and characterized the form of the gettered metals.