D-Line Emission from Small Angle Grain Boundaries in Multicrystalline Si

Abstract:

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We have characterized optical property of small-angle (SA) grain-boundaries (GBs) in high-pure multicrystalline Si by using cathodoluminescence (CL). Prior to CL measurement, the electrical activity of GBs were evaluated by using electron-beam-induced current (EBIC). The SA-GBs are categorized into two groups with room temperature (RT-) EBIC contrast. The SA-GBs with misorientation angle about 1º give weak RT-EBIC contrast and yield D3 and D4. The SA-GBs with 2.5º show strong EBIC contrast and yield D1 and D2. These correspondences reflect the dislocation density at the SA-GBs. We also found the curious distribution of D1 emission in some special GBs, which is now difficult to explain. It is noticed that large-angle GBs do not show any D-line emissions at all.

Info:

Periodical:

Solid State Phenomena (Volumes 156-158)

Edited by:

M. Kittler and H. Richter

Pages:

561-565

DOI:

10.4028/www.scientific.net/SSP.156-158.561

Citation:

T. Sekiguchi et al., "D-Line Emission from Small Angle Grain Boundaries in Multicrystalline Si", Solid State Phenomena, Vols. 156-158, pp. 561-565, 2010

Online since:

October 2009

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Price:

$35.00

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