Structural and Luminescent Properties of Implanted Silicon Layers with Dislocation-Related Luminescence

Abstract:

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Structural and luminescence properties have been studied in silicon layers with dislocation-related luminescence. Multiple room temperature implantation of oxygen ions with doses low than the amorphization threshold was carried out. Silicon ions with a dose exceeding the amorphization threshold by two orders of magnitude were implanted at a higher temperature (≥ 80°C). Both the implantations were not followed by the amorphization of the implanted layers. Annealing in a chlorine-containing atmosphere resulted in formation of extended structural defects and luminescence centers. Some regularities and peculiarities in the properties of the extended defects and dislocation-related luminescence lines were revealed in dependence on the implantation and annealing conditions.

Info:

Periodical:

Solid State Phenomena (Volumes 156-158)

Edited by:

M. Kittler and H. Richter

Pages:

573-578

DOI:

10.4028/www.scientific.net/SSP.156-158.573

Citation:

N.A. Sobolev et al., "Structural and Luminescent Properties of Implanted Silicon Layers with Dislocation-Related Luminescence", Solid State Phenomena, Vols. 156-158, pp. 573-578, 2010

Online since:

October 2009

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Price:

$35.00

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