Structural and Luminescent Properties of Implanted Silicon Layers with Dislocation-Related Luminescence

Abstract:

Structural and luminescence properties have been studied in silicon layers with dislocation-related luminescence. Multiple room temperature implantation of oxygen ions with doses low than the amorphization threshold was carried out. Silicon ions with a dose exceeding the amorphization threshold by two orders of magnitude were implanted at a higher temperature (≥ 80°C). Both the implantations were not followed by the amorphization of the implanted layers. Annealing in a chlorine-containing atmosphere resulted in formation of extended structural defects and luminescence centers. Some regularities and peculiarities in the properties of the extended defects and dislocation-related luminescence lines were revealed in dependence on the implantation and annealing conditions.

• Periodical: Solid State Phenomena (Volumes 156-158)
• Pages: 573-578
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.156-158.573
• Online since: October 2009
• Authors: N.A. Sobolev, Kalyadin Kalyadin, R.N. Kyutt, Elena I. Shek, V.I. Vdovin
• Keywords: Defect, Dislocation, Ion Implantation, Luminescence

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