Structural and Luminescent Properties of Implanted Silicon Layers with Dislocation-Related Luminescence
Structural and luminescence properties have been studied in silicon layers with dislocation-related luminescence. Multiple room temperature implantation of oxygen ions with doses low than the amorphization threshold was carried out. Silicon ions with a dose exceeding the amorphization threshold by two orders of magnitude were implanted at a higher temperature (≥ 80°C). Both the implantations were not followed by the amorphization of the implanted layers. Annealing in a chlorine-containing atmosphere resulted in formation of extended structural defects and luminescence centers. Some regularities and peculiarities in the properties of the extended defects and dislocation-related luminescence lines were revealed in dependence on the implantation and annealing conditions.
M. Kittler and H. Richter
N.A. Sobolev et al., "Structural and Luminescent Properties of Implanted Silicon Layers with Dislocation-Related Luminescence", Solid State Phenomena, Vols. 156-158, pp. 573-578, 2010