Influence of Thermal Annealing on the Properties of Sputtered Si Rich Silicon Oxide Films

Abstract:

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Thin SiOx films deposited by reactive r.f. magnetron sputtering of Si at partial pressure ratios R between oxygen and argon in the range 15%-0.03% are studied. X-ray photoelectron spectroscopy and Variable angle spectroscopic ellipsometry prove enrichment with Si of the layers deposited at R < 0.5 %. Ellipsometric data give information about the refractive index and extinction coefficient of the films. Atomic Force Microscopy results show that for all samples high temperature annealing at 1000oC leads to a decrease of the surface roughness.

Info:

Periodical:

Solid State Phenomena (Volume 159)

Edited by:

Lilyana Kolakieva and Roumen Kakanakov

Pages:

101-104

DOI:

10.4028/www.scientific.net/SSP.159.101

Citation:

E. Manolov et al., "Influence of Thermal Annealing on the Properties of Sputtered Si Rich Silicon Oxide Films", Solid State Phenomena, Vol. 159, pp. 101-104, 2010

Online since:

January 2010

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$35.00

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