Influence of Thermal Annealing on the Properties of Sputtered Si Rich Silicon Oxide Films

Emil Manolov; Mario Curiel; Nicola Nedev; Diana Nesheva; Juan Terrazas; Benjamin Valdez; Roberto Machorro; Julio Soares; Mauro R. Sardela

doi:10.4028/www.scientific.net/SSP.159.101

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HomeSolid State PhenomenaSolid State Phenomena Vol. 159Influence of Thermal Annealing on the Properties...

Influence of Thermal Annealing on the Properties of Sputtered Si Rich Silicon Oxide Films

Abstract:

Thin SiOx films deposited by reactive r.f. magnetron sputtering of Si at partial pressure ratios R between oxygen and argon in the range 15%-0.03% are studied. X-ray photoelectron spectroscopy and Variable angle spectroscopic ellipsometry prove enrichment with Si of the layers deposited at R < 0.5 %. Ellipsometric data give information about the refractive index and extinction coefficient of the films. Atomic Force Microscopy results show that for all samples high temperature annealing at 1000oC leads to a decrease of the surface roughness.

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Periodical:

Solid State Phenomena (Volume 159)

Pages:

101-104

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.159.101

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Online since:

January 2010

Authors:

Emil Manolov, Mario Curiel, Nicola Nedev, Diana Nesheva, Juan Terrazas, Benjamin Valdez, Roberto Machorro, Julio Soares, Mauro R. Sardela

Keywords:

Atomic Force Microscope (AFM), Spectroscopic Ellipsometry (SE), Sputtered SiO_x, Variable Angle Spectroscopic Ellipsometry (VASE)

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