Search for a Suitable Ohmic Metallization Scheme to GaN/AlGaN Heterostructures for Sub-Micron Devices

Lilyana Kolaklieva; Roumen Kakanakov; V. Chitanov; Polina Dulgerova; Volker Cimalla

doi:10.4028/www.scientific.net/SSP.159.81

Paper Titles

Structural and Magnetic Properties of Nanosized Barium Hexaferrite Powders Obtained by Microemulsion Technique
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Deposition and Characterization of Aluminium Nitride (AlN) and Diamond Like Carbon (DLC) Hard Coatings
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Modeling of the Light Emission Spectra of InGaN/GaN Quantum Well with Highly Doped Barriers
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Thickness Dependence of Surface and Interface Phonon-Polariton Modes in InN/AlN Nanolayers
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Search for a Suitable Ohmic Metallization Scheme to GaN/AlGaN Heterostructures for Sub-Micron Devices
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High-Quality GaInAsSb and GaAlAsSb Layers for Thermophotovoltaics Grown by Liquid-Phase Epitaxy
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Preparation and Characterization of Al₂O₃ Thin Films for Catalytic Activity Studies
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A High Effective Selective Absorbing Coating for Solar Thermal Collectors
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Influence of Thermal Annealing on the Properties of Sputtered Si Rich Silicon Oxide Films
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HomeSolid State PhenomenaSolid State Phenomena Vol. 159Search for a Suitable Ohmic Metallization Scheme...

Search for a Suitable Ohmic Metallization Scheme to GaN/AlGaN Heterostructures for Sub-Micron Devices

Abstract:

Ohmic properties, thermal stability and surface morphology of Al-based and non-aluminium metallizations are investigated in dependence on the annealing temperature and initial composition. Non-aluminium contacts show poor ohmic properties, while contact resistivity of 3.47x10-5 Ω.cm2 is achieved for Ti/Al/Ti/Au metallization with a former-Ti/Al ratio of (30 wt.% /70 wt.%). Thermal properties of the Al-based metallization are improved by application of Mo layer as a barrier under the upper Au film of the contact structure. These contacts show excellent thermal stability at operating temperatures as high as 400oC. The less Al amount in the contact composition and Mo barrier layer contribute to the smoother surface and better edge acuity.

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Periodical:

Solid State Phenomena (Volume 159)

Pages:

81-86

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.159.81

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Online since:

January 2010

Authors:

Lilyana Kolaklieva, Roumen Kakanakov, V. Chitanov, Polina Dulgerova, Volker Cimalla

Keywords:

AlGaN/GaN, High Electron Mobility Transistor HEMT, Ohmic Contact, Ti-Al Composite, Transmission Line Model (TLM), X-Ray Photoelectron Spectroscopy (XPS)

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