High-Quality GaInAsSb and GaAlAsSb Layers for Thermophotovoltaics Grown by Liquid-Phase Epitaxy

M. Milanova; Roumen Kakanakov; G. Koleva; P. Vitanov; V. Bakardjieva; M.V. Zamoryanskaya; T.P. Popova

doi:10.4028/www.scientific.net/SSP.159.87

Paper Titles

Deposition and Characterization of Aluminium Nitride (AlN) and Diamond Like Carbon (DLC) Hard Coatings
p.63

Modeling of the Light Emission Spectra of InGaN/GaN Quantum Well with Highly Doped Barriers
p.71

Thickness Dependence of Surface and Interface Phonon-Polariton Modes in InN/AlN Nanolayers
p.77

Search for a Suitable Ohmic Metallization Scheme to GaN/AlGaN Heterostructures for Sub-Micron Devices
p.81

High-Quality GaInAsSb and GaAlAsSb Layers for Thermophotovoltaics Grown by Liquid-Phase Epitaxy
p.87

Preparation and Characterization of Al₂O₃ Thin Films for Catalytic Activity Studies
p.91

A High Effective Selective Absorbing Coating for Solar Thermal Collectors
p.97

Influence of Thermal Annealing on the Properties of Sputtered Si Rich Silicon Oxide Films
p.101

Ferromagnetic Nanomaterials Obtained by Thermal Decomposition of Ferrocene
p.105

HomeSolid State PhenomenaSolid State Phenomena Vol. 159High-Quality GaInAsSb and GaAlAsSb Layers for...

High-Quality GaInAsSb and GaAlAsSb Layers for Thermophotovoltaics Grown by Liquid-Phase Epitaxy

Abstract:

GaSb based III-V heterostuctures are attractive for optoelectronic devices such as midin- frared lasers, detectors, and thermophotovoltaics (TPVs). In this paper the growth and characterization of GaInAsSb and GaAlAsSb quaternary layers, lat-tice-matched to GaSb substrate, are reported, with a particular focus on these alloys for TPV devi-ces. High-quality with a mirror-like surface morphology epilayers Ga1-x InxAsy Sb1-y with In content x in the range 0.1-0.22 and Ga1-xAlxAsySb1-y layers with Al content up to 0.3 in the solid are grown by Liquid-Phase Epitaxy (LPE) from In- and Ga-rich melt, respectively. The compositions of the quaternary compounds are determined by X-ray microanalysis. The crystalline quality of GaInAsSb/ GaSb and GaAlAsSb/GaSb heterostuctures is studied by X-ray diffraction (XRD) and transmission electron microscopy (TEM) measurements.

You might also be interested in these eBooks

Nanostructured Materials, Thin Films and Hard Coatings for Advanced Applications

View Preview

Info:

Periodical:

Solid State Phenomena (Volume 159)

Pages:

87-90

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.159.87

Citation:

Cite this paper

Online since:

January 2010

Authors:

M. Milanova, Roumen Kakanakov, G. Koleva, P. Vitanov, V. Bakardjieva, M.V. Zamoryanskaya, T.P. Popova

Keywords:

GaAlAsSb, GaInAsSb, Liquid Phase Epitaxy (LPE), Thermophotovoltaics

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] C.A. Wang, H.K. Choi, S. L. Ransom, G. W. Charache, L. R. Danielson, and D. M. DePoy: Appl. Phys. Lett. Vol. 75, (1999), p.1305.

Google Scholar

[2] H.K. Choi, C.A. Wang, G. W. Turner, M. J. Manfra, D. L. Spears, G. W. Charache, L. R. Danielson, and D. M. DePoy: Appl. Phys. Lett. Vol. 71, (1997), p.3758.

DOI: 10.1063/1.120497

Google Scholar

[3] C.A. Wang, D.A. Shiau, D. Donetsky, S. Anikeev, G. Belenky, and S. Luryi: Appl. Phys. Lett. Vol. 86, (2005), p.101910.

DOI: 10.1063/1.1873042

Google Scholar

[4] W. Charache , P. F. Baldasaro, L. R. Danielson, D. M. DePoy, M .J. Freeman, C. A. Wang, H. K. Choi, D. Z. Garbazov, R. U. Martinelli, V. Khalfin, S. Saroop, J. M. Borrego, and R. J. Gutmann: J. Appl. Phys. Vol . 85, (1999), p.2247.

DOI: 10.1063/1.369533

Google Scholar

[5] V.M. Andreev, V.P. Khvostikov, V.D. Rumyantsev, S.V. Sorokina, M.Z. Shvarts, Conference Record of the Twenty-Eighth IEEE, (2000), p.1265.

DOI: 10.1109/pvsc.2000.916120

Google Scholar

[6] C.A. Wang, H.K. Choi, and S. L. Ransom: Applied Physics Letters, Vol. 75, (1999), p.1305.

Google Scholar

[7] M.J. Cherng, H.R. Jen, C. A. Larsen, G. B. Stringfellow, H. Lundt, and P. C. Taylor: J. Cryst. Growth Vol. 77, (1986), p.408.

Google Scholar

[8] C. J. Vineis, C. A. Wang, K.F. Jensen: Journal of Crystal Growth Vol. 225, (2001), p.420.

Google Scholar

[9] H. Ehsania, N. Lewisa, G.J. Nicholsa, L. Danielsona, M.W. Dashiella, Z.A. Shellenbargerb, C.A. Wangc: Journal of Crystal Growth Vol. 291 (2006), p.77.

Google Scholar