High-Quality GaInAsSb and GaAlAsSb Layers for Thermophotovoltaics Grown by Liquid-Phase Epitaxy

Abstract:

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GaSb based III-V heterostuctures are attractive for optoelectronic devices such as midin- frared lasers, detectors, and thermophotovoltaics (TPVs). In this paper the growth and characterization of GaInAsSb and GaAlAsSb quaternary layers, lat-tice-matched to GaSb substrate, are reported, with a particular focus on these alloys for TPV devi-ces. High-quality with a mirror-like surface morphology epilayers Ga1-x InxAsy Sb1-y with In content x in the range 0.1-0.22 and Ga1-xAlxAsySb1-y layers with Al content up to 0.3 in the solid are grown by Liquid-Phase Epitaxy (LPE) from In- and Ga-rich melt, respectively. The compositions of the quaternary compounds are determined by X-ray microanalysis. The crystalline quality of GaInAsSb/ GaSb and GaAlAsSb/GaSb heterostuctures is studied by X-ray diffraction (XRD) and transmission electron microscopy (TEM) measurements.

Info:

Periodical:

Solid State Phenomena (Volume 159)

Edited by:

Lilyana Kolakieva and Roumen Kakanakov

Pages:

87-90

DOI:

10.4028/www.scientific.net/SSP.159.87

Citation:

M. Milanova et al., "High-Quality GaInAsSb and GaAlAsSb Layers for Thermophotovoltaics Grown by Liquid-Phase Epitaxy", Solid State Phenomena, Vol. 159, pp. 87-90, 2010

Online since:

January 2010

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$35.00

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